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Institution

NEC

CompanyTokyo, Japan
About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.


Papers
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Patent
Masamoto Tago1
12 Oct 2004
TL;DR: In this article, the external connecting terminals consisting of BGA are formed in the opening portions of the regions for forming the external connected terminals 4 through lands, and the semiconductor chip 1 b is connected to another opening portion of another region for mounting by flip-chip structure through electrodes 11 and bumps 8.
Abstract: In a semiconductor device, rewirings 3 for connecting a semiconductor chip 1 a , a semiconductor chip 1 b and external connecting terminals 4 with each other are formed on the semiconductor chip 1 a An insulating resin 6 having opening portions in regions for forming the external connecting terminals 4 at peripheral portion of the semiconductor chip 1 a and another opening portions in another region for mounting the semiconductor chip 1 b at the central of the semiconductor chip 1 a is overlaid on the rewirings 3 The external connecting terminals 4 consisting of BGA are formed in the opening portions of the regions for forming the external connecting terminals 4 through lands 5 The semiconductor chip 1 b is connected to another opening portions of another region for mounting the semiconductor chip 1 b by flip-chip structure through electrodes 11 and bumps 8 A junction surface of the bumps 8 is sealed by a sealing resin 7 The semiconductor chip 1 b is mounted on the same surface as that the external connecting terminals 4 are formed The under surface of the semiconductor chip 1 b is ground in order that the semiconductor chip 1 b may be shorter than the external connecting terminals 4 The semiconductor chip 1 b is thereby mounted with high density

100 citations

Patent
Mitsunori Takanashi1
27 Jun 2005
TL;DR: In this article, a de-interleaver has a TTI frame buffer, a permutation rule table, and a P bit information table, which contains the size and added position of P bits to be added to the TTI buffer before deinterleaving.
Abstract: A de-interleaver has a TTI frame buffer storing a TTI frame before de-interleaving, a P bit information table storing P bit information containing the size and added position of P bits to be added to the TTI frame before de-interleaving, and a permutation rule table storing permutation rules of de-interleaving. The de-interleaver performs de-interleaving on the data stored in the TTI frame buffer based on the P bit information stored in the P bit information table and the permutation rules stored in the permutation rule table.

100 citations

Journal ArticleDOI
TL;DR: An SDN-based MPC in the NFV context in order to facilitate dynamic provisioning of MPC network functions is proposed and a potential control architecture considering both SDN and NFV is proposed.
Abstract: Mobile packet core networks are undergoing major changes to meet the requirements of the future data tsunami, enhance network flexibility, and reduce both CAPEX and OPEX. In this regard, SDN and NFV technologies have gained great momentum among the teleos, with the promise of interoperability, programmability, and on-demand dynamic provisioning. In this article, we present work being developed in the Mobile Packet Core project within the ONF Wireless & Mobile Working Group regarding SDN architecture for the Mobile Packet Core. In addition, we propose an SDN-based MPC in the NFV context in order to facilitate dynamic provisioning of MPC network functions. Finally, a potential control architecture considering both SDN and NFV is proposed.

100 citations

01 Jan 2000
TL;DR: This work proposes new algorithms that combine BDDs and SAT in order to exploit their complementary benefits, and to offer a mechanism for trading off space vs. time.
Abstract: Image computation finds wide application in VLSI CAD, such as state reachability analysis in formal verification and synthesis, combinational verification, combinational and sequential test. Existing BDD-based symbolic algorithms for image computation are limited by memory resources in practice, while SAT-based algorithms that can obtain the image by enumerating satisfying assignments to a CNF representation of the Boolean relation are potentially limited by time resources. We propose new algorithms that combine BDDs and SAT in order to exploit their complementary benefits, and to offer a mechanism for trading off space vs. time. In particular, (1) our integrated algorithm uses BDDs to represent the input and image sets, and a CNF formula to represent the Boolean relation, (2) a fundamental enhancement called BDD Bounding is used whereby the SAT solver uses the BDDs for the input set and the dynamically changing image set to prune the search space of all solutions, (3) BDDs are used to compute all solutions below intermediate points in the SAT decision tree, (4) a fine-grained variable quantification schedule is used for each BDD subproblem, based on the CNF representation of the Boolean relation. These enhancements coupled with more engineering heuristics lead to an overall algorithm that can potentially handle larger problems. This is supported by our preliminary results on exact reachability analysis of ISCAS benchmark circuits.

100 citations

Journal ArticleDOI
Seiji Samukawa1, Shuichi Furuoya1
TL;DR: In this paper, the authors examined modulated electron cyclotron resonance (ECR) plasma discharge occurring within a few tens of μs and found a good correlation between the density ratio of CF2 radicals and F atoms in the CHF3 plasma, and the combination of the pulse duration and pulse intervals.
Abstract: This study examines modulated electron cyclotron resonance (ECR) plasma discharge occurring within a few tens of μs. It can control the generation of reactive species in plasmas. Reactive species are measured by an actinometric optical emission spectroscopy in the pulsed plasma. Good correlation is found between the density ratio of CF2 radicals and F atoms in the CHF3 plasma, and the combination of the pulse duration and pulse intervals. These characteristics are explained by the dependence of reactive species generation in ECR plasma on a time within a few tens of μs. This method provides for controlling the polymerization during SiO2 etching.

100 citations


Authors

Showing all 33297 results

NameH-indexPapersCitations
Pulickel M. Ajayan1761223136241
Xiaodong Wang1351573117552
S. Shankar Sastry12285886155
Sumio Iijima106633101834
Thomas W. Ebbesen9930570789
Kishor S. Trivedi9569836816
Sharad Malik9561537258
Shigeo Ohno9130328104
Adrian Perrig8937453367
Jan M. Rabaey8152536523
C. Lee Giles8053625636
Edward A. Lee7846234620
Otto Zhou7432218968
Katsumi Kaneko7458128619
Guido Groeseneken73107426977
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20238
202220
2021234
2020518
2019952
20181,088