Motorola

About: Motorola is a company organization based out in Schaumburg, Illinois, United States. It is known for research contribution in the topics: Signal & Communications system. The organization has 27298 authors who have published 38274 publications receiving 968710 citations. The organization is also known as: Motorola, Inc. & Galvin Manufacturing Corporation.

Routing subject to quality of service constraints in integrated communication networks

Abstract: With increasingly diverse QOS requirements, it is impractical to continue to rely on conventional routing paradigms that emphasize the search for an optimal path based on a predetermined metric, or a particular function of multiple metrics. Modern routing strategies must not only be adaptive to network changes but also offer considerable economy of scope. We consider the problem of routing in networks subject to QOS constraints. After providing an overview of prior routing work, we define various QOS constraints. We present a call architecture that may be used for QOS matching and a connection management mechanism for network resource allocation. We discuss fallback routing, and review some existing routing frameworks. We also present a new rule-based, call-by-call source routing strategy for integrated communication networks. >

Process for forming a semiconductor device

Abstract: A process for forming a semiconductor device (68) in which an insulating layer (52) is nitrided and then covered by a thin adhesion layer (58) before depositing a composite copper layer (62). This process does not require a separate diffusion barrier as a portion of the insulating layer (52) has been converted to form a diffusion barrier film (56). Additionally, the adhesion layer (58) is formed such that it can react with the interconnect material resulting in strong adhesion between the composite copper layer (62) and the diffusion barrier film (56) as well as allow a more continuous interconnect and via structure that is more resistant to electromigration.

Capability addressable network and method therefor

Abstract: A wireless, peer-to-peer, capability addressable network (22) is disclosed. The network (22) accommodates any number of peers (20). Network connections are formed based upon proximity between peers (20) and upon a needs and capabilities evaluation (82). Networks (22) support three classifications of service capabilities: service requesting, service providing, and service relaying. Wireless communications occur at a sufficiently low power to form a detection zone (28) of less than five meters for many peers (20).

Wireless communication device for providing at least one near field communication service

Abstract: A wireless communication device (102), for providing at least one Near Field Communication service to a user, comprises a Near Field Communication unit (218) for storing at least one application element (302-312) for use in providing at least one Near Field Communication service, and a user interface element (224) for managing the at least one application element (302-312) stored in the Near Field Communication unit to provide the at least one Near Field Communication service and for providing information relating to the at least one Near Field Communication service to the user The wireless communication device (102) further comprises a receiving element (226) for receiving update information for a Near Field Communication service and for transferring the received update information to the Near Field Communication unit (218) to update the Near Field Communication unit (218) and a user interface update element (228) for updating the information provided to the user by the user interface element according to the received update information transferred to the Near Field Communication unit

Ge–Sn semiconductors for band-gap and lattice engineering

Abstract: We describe a class of Si-based semiconductors in the Ge1−xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1−xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.