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Institution

Motorola

CompanySchaumburg, Illinois, United States
About: Motorola is a company organization based out in Schaumburg, Illinois, United States. It is known for research contribution in the topics: Signal & Communications system. The organization has 27298 authors who have published 38274 publications receiving 968710 citations. The organization is also known as: Motorola, Inc. & Galvin Manufacturing Corporation.


Papers
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Journal ArticleDOI
TL;DR: The VBIC95 bipolar junction transistor (BJT) model was developed as an industry standard replacement for the SPICE Gummel-Poon (SGP) model, to improve deficiencies of the SGP model that have become apparent over time as mentioned in this paper.
Abstract: This paper details the VBIC95 bipolar junction transistor (BJT) model. The model was developed as an industry standard replacement for the SPICE Gummel-Poon (SGP) model, to improve deficiencies of the SGP model that have become apparent over time because of the advances in BJT process technology. VBIC95 is still based on the Gummel-Poon formulation, and thus can degenerate to be similar to the familiar SGP model. However, it includes improved modeling of the Early effect, quasi-saturation, substrate and oxide parasitics, avalanche multiplication, and temperature behavior that can be invoked selectively based on model parameter values.

240 citations

Patent
27 Jul 2004
TL;DR: In this paper, the authors propose to use relay resources to increase the quality of service (QoS) for the facilitated communication of a remote unit that is already within reception range of a base station.
Abstract: Communications sourced by a remote unit (14) that is already within reception range of a base site (10) can nevertheless be further facilitated through allocation of one or more relay resources (15, 16). Such relay resources, properly employed, then serve to effectively increase the quality of service for the facilitated communication. This, in turn, can permit the use of, for example, increased data rates for communications from a relatively low power remote unit.

240 citations

Patent
29 Jul 1996
TL;DR: In this paper, a display including a plurality of inverted organic light emitting diodes is formed on the major surface of a hard plastic card and coupled to the driver circuit, and the display is coupled to an inverted circuit.
Abstract: A hard plastic card display device including a hard plastic card having a major surface and a driver circuit. A display, including a plurality of inverted organic light emitting diodes, is formed on the major surface and coupled to the driver circuit.

240 citations

Journal ArticleDOI
TL;DR: In this paper, the first phase of intermetallic compound formation in the wetting reaction and the other phases formed in solid-state aging was predicted. But, the morphological change and the large difference in growth rates between the wetter reaction and solid state aging cannot be predicted.
Abstract: Intermetallic compound (IMC) growth during solid-state aging at 125, 150, and 170 °C up to 1500 h for four solder alloys (eutectic SnPb, Sn–3.5Ag, Sn–3.8Ag–0.7Cu, and Sn–0.7Cu) on Cu under bump metallization was investigated. The samples were reflowed before aging. During the reflow, the solders were in the molten state and the formation of the IMC Cu6Sn5 in the cases of eutectic SnPb and Sn–3.5Ag had a round scallop-type morphology, but in Sn–0.7Cu and Sn–3.8Ag–0.7Cu the scallops of Cu6Sn5 were faceted. In solid-state aging, all these scallops changed to a layered-type morphology. In addition to the layered Cu6Sn5, the IMC Cu3Sn also grew as a layer and was as thick as the Cu6Sn5. The activation energy of intermetallic growth in solid-state aging is 0.94 eV for eutectic SnPb and about 1.05 eV for the Pb-free solders. The rate of intermetallic growth in solid-state aging is about 4 orders of magnitude slower than that during reflow. Ternary phase diagrams of Sn–Pb–Cu and Sn–Ag–Cu are used to discuss the reactions. These diagrams predict the first phase of IMC formation in the wetting reaction and the other phases formed in solid-state aging. Yet, the morphological change and the large difference in growth rates between the wetting reaction and solid-state aging cannot be predicted.

240 citations

Patent
Karen E. Jachimowicz1, Scott R. Novis1, Dennis Barry1, Wenbin Jiang1, Michael S. Lebby1 
20 Sep 1996
TL;DR: An optical smart card (10) including a microchip (14) having information stored thereon, an optical holographic sensor pad (16), capable of detecting and collecting light beams emitted from a remote reader/transmitter (52), a light source (18) capable of emitting dataelectronic information contained on the microchip(14) back to the remote reader or transmitter, and electronics (20) connected to the sensor pad, the light source, and the micro chip (14), as mentioned in this paper.
Abstract: An optical smart card (10) including a microchip (14) having information stored thereon, an optical holographic sensor pad (16) capable of detecting and collecting light beams emitted from a remote reader/transmitter (52), a light source (18) capable of emitting dataelectronic information contained on the microchip (14) back to the remote reader/transmitter (52) and electronics (20) connected to the sensor pad (16), the light source (18) and the microchip (14).

240 citations


Authors

Showing all 27298 results

NameH-indexPapersCitations
Georgios B. Giannakis137132173517
Yonggang Huang13679769290
Chenming Hu119129657264
Theodore S. Rappaport11249068853
Chang Ming Li9789642888
John Kim9040641986
James W. Hicks8940651636
David Blaauw8775029855
Mark Harman8350629118
Philippe Renaud7777326868
Aggelos K. Katsaggelos7694626196
Min Zhao7154724549
Weidong Shi7052816368
David Pearce7034225680
Douglas L. Jones7051221596
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20232
20229
202129
2020131
2019134
2018144