Toyota

About: Toyota is a company organization based out in Safenwil, Switzerland. It is known for research contribution in the topics: Internal combustion engine & Battery (electricity). The organization has 40032 authors who have published 55003 publications receiving 735317 citations. The organization is also known as: Toyota Motor Corporation & Toyota Jidosha KK.

Neoadjuvant Oxaliplatin and Capecitabine and Bevacizumab without Radiotherapy for Poor-risk Rectal Cancer: N-SOG 03 Phase II Trial

Abstract: Objective This Phase II trial was designed to evaluate the safety and efficacy of neoadjuvant oxaliplatin and capecitabine and bevacizumab without radiotherapy in patients with poor-risk rectal cancer. Methods Patients with magnetic resonance imaging-defined poor-risk rectal cancer received neoadjuvant oxaliplatin and capecitabine and bevacizumab followed by total mesorectal excision or more extensive surgery. Results Between February 2010 and December 2011, 32 patients were enrolled in this study. The completion rate of the scheduled chemotherapy was 91%. Reasons for withdrawal were refusal to continue therapy in two patients and disease progression in one, with two of these three patients not undergoing surgery. Among the 29 patients who completed the scheduled chemotherapy, one refused surgery within 8 weeks after the completion of chemotherapy, which was the period stipulated by the protocol, and another had rectal perforation, requiring urgent laparotomy. As a result, the completion rate of this experimental treatment was 84%. Of the 30 patients who underwent surgery, the R0 resection rate was 90% and a postoperative complication occurred in 43%. A pathological complete response was observed in 13% and good tumor regression was exhibited in 37%. Conclusions Neoadjuvant oxaliplatin and capecitabine plus bevacizumab for poor-risk rectal cancer caused a high rate of anastomotic leakage and experienced a case with perforation during chemotherapy, both of which were bevacizumab-related toxicity. Although the short-term results with the completion rate of 84.4% and the pathological complete response rate of 13.3% were satisfactory, we have to reconsider the necessity of bevacizumab in neoadjuvant chemotherapy (UMIN number, 000003507).

Trailer brake control device of tractor-trailer combination vehicle for suppression of side sway of trailer

Abstract: In a tractor-trailer combination vehicle, a trailer brake control device has a detector of hitch angle expanded by the longitudinal axis of the trailer relative to the longitudinal axis of the tractor around a vertical pivot axis of a joint between the tractor and the trailer, and a controller for selectively actuating brakes of the trailer, wherein the controller controls the actuation of the trailer brakes based upon at least two operational conditions such that the controller starts the actuation of the trailer brakes when the hitch angle increases beyond a threshold value determined therefor and ends the actuation of the trailer brakes when a duration determined for the actuation of the trailer brakes lapses.

The synthesis and characterization of platinum nanoparticles: a method of controlling the size and morphology

Abstract: In this paper, Pt nanoparticles with good shapes of nanocubes and nano-octahedra and well-controlled sizes in the range 5?7 and 8?12?nm, respectively, have been successfully synthesized. The modified polyol method by adding silver nitrate and varying the molar ratio of the solutions of silver nitrate and H2PtCl6 has been used to produce Pt nanoparticles of the size and shape to be controlled. The size and morphology of Pt nanoparticles have been studied by transmission electron microscopy (TEM) and high resolution TEM (HRTEM). The results have shown that their very sharp and good shapes exist in the main forms of cubic, cuboctahedral, octahedral and tetrahedral shapes directly related to the crystal nucleation along various directions of the {100} cubic, {111} octahedral and {111} tetrahedral facets during synthesis. In particular, various irregular and new shapes of Pt nanoparticles have been found. Here, it is concluded that the role of silver ions has to be considered as an important factor for promoting and controlling the development of Pt nanoparticles of {100} cubic, {111} octahedral and {111} tetrahedral facets, and also directly orienting the growth and formation of Pt nanoparticles.

Ideal Pt loading for a Pt/CeO2-based catalyst stabilized by a Pt–O–Ce bond

Abstract: Pt–O–Ce bond formation under suitable oxidative conditions on the surface of a catalyst support inhibits Pt particle sintering and promotes the redispersion of agglomerated Pt particles. In the present study the influence of Pt loading on changes in the catalytic activity and Pt particle size was evaluated for aged and regenerated Pt/CeO2-based catalysts. Catalysts with a lower Pt loading exhibited less catalytic deactivation and Pt sintering. There was an ideal Pt loading for which regeneration restored the Pt particle size and the catalytic activity to the same values as for the fresh state. This ideal Pt loading is discussed in terms of Pt anchor sites by considering the structure and composition around Pt on a CeO2-based catalyst.

Silicon carbide semiconductor device with trench

Abstract: A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n+ type silicon carbide semiconductor substrate 1, an n- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are successively laminated on top of one another. An n+ type source region 6 is formed in a predetermined region of the surface in the p type silicon carbide semiconductor layer 3, and a trench 9 is formed so as to extend through the n+ type source region 6 and the p type silicon carbide semiconductor layer 3 into the n- type silicon carbide semiconductor layer 2. A thin-film semiconductor layer (n type or p type) 11a is extendedly provided on the surface of the n+ type source region 6, the p type silicon carbide semiconductor layer 3, and the n- type silicon carbide semiconductor layer 2 in the side face of the trench 9. A gate electrode layer 13 is disposed through a gate insulating layer 12 within the trench 9. A source electrode layer 15 is provided on the surface of the p type silicon carbide semiconductor layer 3 and on the surface of the n+ type source region 6, and a drain electrode layer 16 is provided on the surface of the n+ type silicon carbide semiconductor substrate 1.