Journal ArticleDOI
Fabrication and analysis of deep submicron strained-Si n-MOSFET's
TLDR
In this paper, deep submicron strained-Si n-MOSFETs were fabricated on strained Si/relaxed Si/sub 0.8/Ge/sub sub 0.2/ heterostructures to yield well matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices.Abstract:
Deep submicron strained-Si n-MOSFETs were fabricated on strained Si/relaxed Si/sub 0.8/Ge/sub 0.2/ heterostructures. Epitaxial layer structures were designed to yield well-matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices. In spite of the high substrate doping and high vertical fields, the MOSFET mobility of the strained-Si devices is enhanced by 75% compared to that of the unstrained-Si control devices and the state-of-the-art universal MOSFET mobility. Although the strained and unstrained-Si MOSFETs exhibit very similar short-channel effects, the intrinsic transconductance of the strained Si devices is enhanced by roughly 60% for the entire channel length range investigated (1 to 0.1 /spl mu/m) when self-heating is reduced by an ac measurement technique. Comparison of the measured transconductance to hydrodynamic device simulations indicates that in addition to the increased low-field mobility, improved high-field transport in strained Si is necessary to explain the observed performance improvement. Reduced carrier-phonon scattering for electrons with average energies less than a few hundred meV accounts for the enhanced high-field electron transport in strained Si. Since strained Si provides device performance enhancements through changes in material properties rather than changes in device geometry and doping, strained Si is a promising candidate for improving the performance of Si CMOS technology without compromising the control of short channel effects.read more
Citations
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Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.
Journal ArticleDOI
Theory of ballistic nanotransistors
TL;DR: In this paper, numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors, and the model reduces to Natori's theory of the ballistic MOSFET.
Journal ArticleDOI
Considerations for Ultimate CMOS Scaling
TL;DR: Transistor architectures such as extremely thin silicon-on-insulator and FinFET (and related architecture such as TriGate, Omega-FET, Pi-Gate), as well as nanowire device architectures, are compared and contrasted.
Journal ArticleDOI
Si/SiGe heterostructures: from material and physics to devices and circuits
TL;DR: In this paper, the authors present a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system, in particular, the important device technologies in mainstream microelectronics.
Journal ArticleDOI
Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors
TL;DR: In this paper, the fabrication and electrical characteristics of highmobility field effect transistors (FETs) using ZnO nanorods were reported, and the role of the polymer coating in the enhancement of the devices was discussed.
References
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Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.
Journal ArticleDOI
Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
TL;DR: In this paper, the authors reported record high electron mobility in modulation-doped Si/SiGe at high magnetic field (≳10 T), fractional quantum Hall filling factors have been observed, and corresponding activation energies have been calculated.
Proceedings ArticleDOI
Strain dependence of the performance enhancement in strained-Si n-MOSFETs
TL;DR: The first measurements of the strain dependence of the electron mobility enhancement in n-MOSFETs employing tensilely-strained Si channels are reported in this article for pseudomorphic Si films grown on relaxed Si/sub 1-x/Ge/sub x/ layers.
Journal ArticleDOI
Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques
TL;DR: In this article, a new thermal extraction technique based on an analytically derived expression for the electro-thermal drain conductance in saturation is presented, which can be used confidently over a wide range of bias conditions, with both fully and partially depleted devices.
Proceedings ArticleDOI
Transconductance enhancement in deep submicron strained Si n-MOSFETs
TL;DR: In this paper, the first measurements on deep submicron strained-Si n-MOSFETs were reported, showing that electron mobility was enhanced by /spl sim/75% and extrinsic transconductance was increased by /pl sim/45% for channel lengths of 0.1 /spl mu/m when AC measurements were used to reduce self-heating effects.