Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations
G. V. Luong,Sebastiano Strangio,A. T. Tiedemann,P. Bernardy,Stefan Trellenkamp,Pierpaolo Palestri,S. Mantl,Qing-Tai Zhao +7 more
TL;DR: In this article, a half SRAM cell with strained Si nanowire complementary tunnel-FETs (TFETs) was fabricated and characterized to explore the feasibility and functionality of 6T-SRAM based on TFETs.
Journal ArticleDOI
High-temperature operation of a silicon qubit.
TL;DR: In this article, a single-electron tunnelling transport was used to enable the operation of silicon spin qubits at 5-10 K through a spin blockade effect.
Journal ArticleDOI
Tunnel FETs for Ultra-Low Voltage Digital VLSI Circuits: Part II–Evaluation at Circuit Level and Design Perspectives
Massimo Alioto,David Esseni +1 more
TL;DR: This investigation permits to understand the potential of TFETs and their advantages over traditional devices within a unitary framework that is based on fair design and comparison from device to circuit level, as well as to develop clear design perspectives in the context of ULV/ULP VLSI digital circuits.
Journal ArticleDOI
Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect.
TL;DR: It is shown that the Rashba interaction can reduce the subthreshold swing by more than 25% compared to Boltzmann's limit in currently available materials but without any fundamental lower bound, a discovery that can guide future material design and steer the engineering of topological quantum devices.
Journal ArticleDOI
Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities
Georgy Alymov,Georgy Alymov,V. Vyurkov,V. Vyurkov,Victor Ryzhii,Dmitry Svintsov,Dmitry Svintsov +6 more
TL;DR: In this article, the authors proposed a 2D graphene bilayer-based TFET which demonstrates a record steep sub-threshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.