Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Proceedings ArticleDOI
Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi 2 tunnel junctions
TL;DR: A novel, self-aligned process to form the p-i-n TFETs is developed which greatly easies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dopant segregation.
Proceedings ArticleDOI
An Efficient Adder Architecture with Three- Independent-Gate Field-Effect Transistors
TL;DR: A ripple-carry 32-bit adder is uniquely designed using simulated TIGFET technology and its metrics are compared against CMOS High-Performance (HP) and CMOS Low-Voltage.
Journal ArticleDOI
Fast Yet Quantum‐Efficient Few‐Layer Vertical MoS2 Photodetectors
TL;DR: In this article, a vertical few layer molybdenum disulfide (MoS2) photodevices with semitransparent metallic electrodes is proposed for photocurrent generation.
Journal ArticleDOI
Flexible semi-around gate silicon nanowire tunnel transistors with a sub-kT/q switch
TL;DR: In this paper, the authors demonstrate the sub-60mV/dec operation of a flexible semi-around gate TFET on a plastic substrate using Si nanowires (SiNWs) as the channel material.
Journal ArticleDOI
Graphene-based tunnel junction
V. L. Katkov,Vladimir A. Osipov +1 more
TL;DR: In this paper, the tunneling current in a junction formed by half-planes and bilayer graphene with two possible packing types and two possible orientations of the crystal lattice is calculated by the Green's function technique in the framework of the tight-binding approximation.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.