Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Can Homojunction Tunnel FETs Scale Below 10 nm
TL;DR: In this article, it was shown that scaling TFETs in general requires scaling down the bandgap and scaling up the effective mass of the transistors for high performance, and the authors proposed a channel material with an optimized bandgap (i.e., 1.2qV_{\mathrm{ DD}}$ [eV] ) and an engineered effective mass (ii.e.
Journal ArticleDOI
Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETs
TL;DR: In this article, the optimal pocket thickness for arbitrary semiconductor materials, which is a tradeoff between realistic gate work function and the desired tunnel field effect, is analyzed in detail.
Journal ArticleDOI
Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors
Bei Jiang,Xuming Zou,Xuming Zou,Jie Su,Jinghua Liang,Jingli Wang,Huijun Liu,Liping Feng,Changzhong Jiang,Feng Wang,Jun He,Lei Liao,Lei Liao +12 more
Journal ArticleDOI
Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage Modulation
TL;DR: This study demonstrates the promising potential of bendable NW FBFETs for use as low-power components in integrated circuits or memory devices.
Journal ArticleDOI
Temperature analysis of Ge/Si heterojunction SOI-Tunnel FET
Sweta Chander,Sanjeet Kumar Sinha,Sanjay Kumar,Prince Kumar Singh,Kamalaksha Baral,Kunal Singh,S. Jit +6 more
TL;DR: In this paper, the impact of temperature variation on the electrical characteristics such as tunneling width, subthreshold swing, threshold voltage, and I O N / I O F F ratio of Ge/Si heterojunction tunnel field effect transistor (TFET) for different drain voltages was presented.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.