Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors
TL;DR: In this article, a monolayer MoS2 FET with near-zero hysteresis reached 0.15% of the sweeping range of the gate bias, a record value observed so far in 2D FETs.
Journal ArticleDOI
Atomically-thin layered films for device applications based upon 2D TMDC materials
TL;DR: In this paper, a review of recent developments in 2D layered materials, specifically transition-metal dichalcogenides (TMDCs), from a thin film perspective is presented.
Journal ArticleDOI
The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems
TL;DR: The RFET basics and current status are reviewed and the state of the art of reconfigurable devices will be summarized and the RFET will be introduced together with related devices based on silicon nanowire technology.
Journal ArticleDOI
Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor
Ankit Jain,Muhammad A. Alam +1 more
TL;DR: In this article, the fundamental constraints of stability and hysteresis-free operation dictate that there is a lower limit associated with each negative capacitance (NC) gate insulator in FETs.
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A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET
TL;DR: In this article, the impacts of interface traps on tunneling FET (TFET) are examined in terms of different trap energies and distributions, charge neutrality level (CNL), and effects of random trap fluctuation, in comparison with MOSFET.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.