Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors.
Stefanie Morkötter,Nari Jeon,Daniel Rudolph,Bernhard Loitsch,D. Spirkoska,E. A. Hoffmann,Markus Döblinger,Sonja Matich,Jonathan J. Finley,Lincoln J. Lauhon,Gerhard Abstreiter,Gregor Koblmüller +11 more
TL;DR: Remote Si delta (δ)-doping of radial GaAs-AlGaAs core-shell NWs are demonstrated that unambiguously exhibit a strongly confined electron gas with enhanced low-temperature field-effect mobilities up to 5 × 10(3) cm(2) V(-1) s(-1).
Journal ArticleDOI
Dielectric Modulated Biosensor Architecture: Tunneling or Accumulation Based Transistor?
Praveen Dwivedi,Abhinav Kranti +1 more
TL;DR: In this article, the authors present a feasibility assessment of tunneling and accumulation mode p-type transistor architectures for use as dielectric-modulated biosensors, where the performance of devices is compared through the estimation of the change in electrical characteristics between Iris antigen (bioreceptor) and anti-Iris antigen (target biomolecule) for a partially filled cavity.
Journal ArticleDOI
Extended-Source Double-Gate Tunnel FET With Improved DC and Analog/RF Performance
TL;DR: In this article, an extended-source double-gate tunnel field effect transistor (ESDG-TFET) was proposed to enhance the dc and analog/RF performance by extending the source into channel to increase the line and point tunneling.
Journal ArticleDOI
A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor
Journal ArticleDOI
Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
Saurabh Sant,Andreas Schenk +1 more
TL;DR: In this article, the effect of conduction and valence band offsets on the subthreshold swing of a double-gate tunnel field effect transistor (TFET) with gate-overlapped source is presented.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.