Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
Reads0
Chats0
TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
More filters
Patent
One transistor active pixel sensor with tunnel FET
TL;DR: In this article, a tunneling field effect transistor for light detection is proposed, where a p-type region connected to a source terminal, a n-type area connected to drain terminal, and an intrinsic region located between the p and the n-types to form a P-I junction or an N-I juncture with the p or the p-types, respectively, where an area of the intrinsic region that is not covered by the first gate electrode forms a nongated intrinsic area configured for light absorption.
Journal ArticleDOI
Investigation the impact of the gate work-function and biases on the sensing metrics of TFET based biosensors
Praveen Dwivedi,Rohit Singh +1 more
Journal ArticleDOI
Composition-dependent band gaps and indirect–direct band gap transitions of group-IV semiconductor alloys
TL;DR: The coherent potential approximation is used to investigate the band structures of group-IV semiconductor alloys, including Si(x)Ge( 1-x), Ge(1-y)Sn(y) and Si( x)Ge (1-x-x) Sn(y), proving the reliability and accuracy of the method used.
Proceedings ArticleDOI
Temperature sensitivity analysis of polarity controlled electrically doped hetero-TFET
TL;DR: In this paper, a temperature sensitivity analysis of polarity controlled H-TFET was performed using ATLAS technology computer aided design (TCAD) device simulator, and it was shown that the Ion/Ioff current decreases with temperature, while, Ioff increases with temperature because of different scattering mechanisms at higher temperature.
Journal ArticleDOI
Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs
Sebastian Blaeser,S. Glass,C. Schulte-Braucks,Keyvan Narimani,Nils von den Driesch,Stephan Wirths,A. T. Tiedemann,Stefan Trellenkamp,Dan Buca,Siegfried Mantl,Qing-Tai Zhao +10 more
TL;DR: In this article, a SiGe/Si heterostructure TFET is fabricated, making use of a selective and self-adjusted silicidation, thus enlarging the area for band-to-band-tunneling (BTBT) in a region directly underneath the gate.
References
More filters
Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.