Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Simulation and comparative study on analog/RF and linearity performance of III–V semiconductor-based staggered heterojunction and InAs nanowire(nw) Tunnel FET
TL;DR: In this article, a comparative study on linearity and analog/radio frequency presentation of an III-V staggered hetero-junction nanowire (NW) TFET with Si and InAs based TFET of same dimension is presented.
Journal ArticleDOI
Multimode Silicon Nanowire Transistors
Sebastian Glassner,C. Zeiner,P. Periwal,P. Periwal,Thierry Baron,Thierry Baron,Emmerich Bertagnolli,Alois Lugstein +7 more
TL;DR: A multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction and a nonconventional tunneling transistor is realized, enabling an effective suppression of ambipolarity.
Journal ArticleDOI
Performance of a ferroelectric glass electrolyte in a self-charging electrochemical cell with negative capacitance and resistance
TL;DR: In this article, an electrochemical cell containing two electrodes separated by a self-organizing glass electrolyte containing alkali cations was used to determine the electrical impedance, dielectric spectroscopy, and electrochemical discharge.
Journal ArticleDOI
Switching at Less Than 60 mV/Decade with a “Cold” Metal as the Injection Source
TL;DR: In this paper, the authors showed that the subthreshold swing of the thermionic current of a transistor using a cold metal contact can be much smaller than 60 mV/decade at room temperature.
Journal ArticleDOI
Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors
Wan Sik Hwang,Wan Sik Hwang,Wan Sik Hwang,Pei Zhao,SungGeun Kim,Rusen Yan,Gerhard Klimeck,Alan Seabaugh,Susan K. Fullerton-Shirey,Susan K. Fullerton-Shirey,Huili Grace Xing,Huili Grace Xing,Debdeep Jena,Debdeep Jena +13 more
TL;DR: In this article, a p-n junction is formed in the GNR channel by electrostatic doping using graphene side gates, boosted by ions in a solid polymer electrolyte, and the transistors exhibit reproducible and reversible NDR due to interband tunneling of carriers.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.