Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Carbon Nanotubes: Present and Future Commercial Applications
Michael De Volder,Michael De Volder,Michael De Volder,Sameh Tawfick,Sameh Tawfick,Ray H. Baughman,A. John Hart,A. John Hart +7 more
TL;DR: Although not yet providing compelling mechanical strength or electrical or thermal conductivities for many applications, CNT yarns and sheets already have promising performance for applications including supercapacitors, actuators, and lightweight electromagnetic shields.
Journal ArticleDOI
Electronics based on two-dimensional materials
Gianluca Fiori,Francesco Bonaccorso,Giuseppe Iannaccone,Tomas Palacios,Daniel Neumaier,Alan Seabaugh,Sanjay K. Banerjee,Luigi Colombo +7 more
TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
Journal ArticleDOI
A subthermionic tunnel field-effect transistor with an atomically thin channel.
Deblina Sarkar,Xuejun Xie,Wei Liu,Wei Cao,Jiahao Kang,Yongji Gong,Stephan Kraemer,Pulickel M. Ajayan,Kaustav Banerjee +8 more
TL;DR: This paper demonstrates band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-dimensional semiconductor, that exhibit steep turn-on and is the only planar architecture tunnel-fET to achieve subthermionic subthreshold swing over four decades of drain current, and is also the only tunnel- FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts.
Journal ArticleDOI
A III–V nanowire channel on silicon for high-performance vertical transistors
TL;DR: Surrounding-gate transistors using core–multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability.
Journal ArticleDOI
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Xudong Wang,Xudong Wang,Peng Wang,Jianlu Wang,Weida Hu,Xiaohao Zhou,Nan Guo,Hai Huang,Shuo Sun,Hong Shen,Tie Lin,Minghua Tang,Lei Liao,Anquan Jiang,Jinglan Sun,Xiangjian Meng,Xiaoshuang Chen,Wei Lu,Junhao Chu +18 more
TL;DR: A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved, tuned by the ultrahigh electrostatic field from the ferroelectric polarization.
References
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Journal ArticleDOI
On Enhanced Miller Capacitance Effect in Interband Tunnel Transistors
TL;DR: In this article, the transient response of double-gate thin-body-silicon interband tunnel field-effect transistor (TFET) with its metal-oxide-semiconductor field effect transistor counterpart was compared.
Journal ArticleDOI
Temperature-Dependent $I$ – $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET
TL;DR: In this paper, the experimental temperature-dependent characteristics of vertical In0.53Ga0.47As tunnel field effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design.
Proceedings ArticleDOI
Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification
TL;DR: In this paper, the first complete experimental demonstration and investigation of subthreshold swing, SS, smaller than 60 mV/decade, at room temperature, due to internal voltage amplification in FETs with a Metal-Ferroelectric-Metal-Oxide gate stack was reported.
Proceedings ArticleDOI
Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor
TL;DR: Reference NANOLAB-CONF-2005-019View record in Web of Science Record created on 2007-05-16, modified on 2017-05/10 as discussed by the authors.
Journal ArticleDOI
Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
Mathieu Luisier,Gerhard Klimeck +1 more
TL;DR: In this paper, the Wentzel-Kramers-Brillouin (WKB) approximation and an atomistic, full-band quantum transport solver including direct and phonon-assisted tunneling (PAT) were used to simulate field effect transistors (TFETs).