Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Impact of heterogeneous gate dielectric on DC, RF and circuit-level performance of source-pocket engineered Ge/Si heterojunction vertical TFET
Manas Ranjan Tripathy,Ashish Kumar Singh,A Samad,Prince Kumar Singh,Kamalaksha Baral,Satyabrata Jit +5 more
Journal ArticleDOI
Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device.
TL;DR: The results suggest that the present type of the Si Λ-NDT device could be prospective for next-generation arithmetic circuits.
Journal ArticleDOI
Ultrasensitive WSe2/α-In2Se3 NIR Photodetector Based on Ferroelectric Gating Effect
Journal ArticleDOI
A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance.
TL;DR: By using the dopingless channel and fin structure, the difficulties of doping process and asymmetric gate overlap formation can be resolved and the structure of DF-TFET can possess good manufacture applicability and remarkably reduce footprint.
Journal ArticleDOI
New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor
M. Venkatesh,N. B. Balamurugan +1 more
TL;DR: An accurate two dimensional sub-threshold modeling of Germanium based dual Halo gate stacked Triple Material Surrounding Gate (Ge-DH-GS-TM-SG) tunnel field effect transistor is proposed for the first time in this paper.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.