Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Proceedings ArticleDOI
Effect of gate dielectric thickness on gate leakage in tunnel field effect transistor
Poornendu Chaturvedi,Nitin Goyal +1 more
TL;DR: In this article, the effect of gate dielectric thickness on gate leakage in tunnel FETs was simulated using two dimensional numerical simulations, and it was found that gate leakage is the most important component of off-state current and should be considered in future TFET device design.
Journal ArticleDOI
Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors
TL;DR: In this paper, the authors proposed decoupled electric field terms in the pre-exponential factor and exponential function of generation-rate expressions for low-bandgap semiconductors.
Journal ArticleDOI
Effects of Charge Trapping at the MoS2-SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors.
TL;DR: A deviation of SS from its linear relationship with temperature is found and this deviation is related to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation.
Journal ArticleDOI
Impacts of work function variation and line-edge roughness on TFET and FinFET devices and 32-bit CLA circuits
TL;DR: In this article, the variability of III-V homojunction tunnel FET (TFET) and FinFET devices and 32-bit carry-lookahead adder (CLA) circuit operating in near-threshold region were investigated and compared using 3D atomistic TCAD mixed-mode Monte-Carlo simulations and HSPICE simulations with look-up table based Verilog-A models calibrated with TCAD simulation results.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.