Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High $\text{I}_{\mathrm {ON}}/\text{I}_{\mathrm {OFF}}$ Ratio
Yang Zhao,Chunlei Wu,Qianqian Huang,Cheng Chen,Jiadi Zhu,Lingyi Guo,Rundong Jia,Zhu Lv,Yuchao Yang,Ming Li,Ru Huang +10 more
TL;DR: A novel hetero-stacked TFET (HS-TFET) is experimentally demonstrated and optimized for the first time, which can effectively suppress the sub-threshold slope (SS) degradation without leakage current increase through self-adaptively current replenishing with bandgap engineering, greatly alleviating the critical issue of high average SS in conventional TFETs.
Journal ArticleDOI
Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors
TL;DR: A novel static random access memory unit cell design and its array structure consisting of single-gated feedback field-effect transistors (FBFETs) demonstrates the promising potential of the FBFET SRAM for high-performance, high-density, and low-power memory applications.
Journal ArticleDOI
Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems
Giovanni V. Resta,Alessandra Leonhardt,Yashwanth Balaji,Stefan De Gendt,Pierre-Emmanuel Gaillardon,Giovanni De Micheli +5 more
TL;DR: A possible roadmap to enable CMOS compatible integration of 2-D materials and a particular emphasis on doping-free polarity-controllable systems that use electrostatic doping to eliminate the need for physical or chemical doping are described.
Patent
Modular interconnects for gate-all-around transistors
TL;DR: The modular interconnect structure as mentioned in this paper facilitates building complex, yet compact, integrated circuits from vertical GAA FETs, which are formed at the same time as the transistors.
Journal ArticleDOI
Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices
TL;DR: In this article, a rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced, where an interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.