Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Synthesis and Applications of III-V Nanowires
TL;DR: The way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires is reviewed, and one of how the different families ofnanowires can contribute to applications is combined.
Journal ArticleDOI
Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems
TL;DR: This work focuses on the development of nonvolatile memories and neuromorphic computing systems based on QD thin-film solids and discusses the advantageous traits of QDs for novel and optimized memory techniques in both conventional flash memories and emerging memristors.
Proceedings ArticleDOI
Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μA/μm at V DS = 0.5 V
Guangle Zhou,Rui Li,T. Vasen,Meng Qi,Soo Doo Chae,Yeqing Lu,Qin Zhang,Haijun Zhu,J.-M. Kuo,T. Kosel,Mark A. Wistey,Patrick Fay,Alan Seabaugh,Huili Xing +13 more
TL;DR: In this paper, a gate-recess process was used to achieve a record on-current of 180 μA/μm at V DS = V GS = 0.5 V with an Ion/Ioff ratio of 6 ×103.
Journal ArticleDOI
Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials
Hesameddin Ilatikhameneh,Yaohua Tan,Bozidar Novakovic,Gerhard Klimeck,Rajib Rahman,Joerg Appenzeller +5 more
TL;DR: In this article, the performance of tunnel field effect transistors (TFETs) based on 2-D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations.
Journal ArticleDOI
Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer
Manh-Ha Doan,Youngjo Jin,Subash Adhikari,Sang Hyub Lee,Jiong Zhao,Seong Chu Lim,Young Hee Lee +6 more
TL;DR: Transport properties of a prototype multilayer MoS2/WSe2 heterojunction via a tunable charge inversion/depletion layer are investigated and recombination and space-charge-limited behaviors are revealed, similar to those of the heterostructures built from organic semiconductors.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.