Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
Reads0
Chats0
TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
More filters
Journal ArticleDOI
Performance Analysis of Drain Pocket Hetero Gate Dielectric DG-TFET: Solution for Ambipolar Conduction and Enhanced Drive Current
Journal ArticleDOI
Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket
TL;DR: It is demonstrated that the proposed device architecture outperforms the other two devices in terms of on current and ambipolar current and the good accordance between the modeled results and numerical simulation results verifies the accuracy of the proposed models.
Journal ArticleDOI
Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires
TL;DR: In this paper, the authors present a cross-platform quantum transport computation tool that allows for flexible and efficient calculations of materials transport properties and realistic device simulations to extract currentvoltage and transfer characteristics.
Posted Content
A Green and Socially Equitable Direction for the ICT Paradigm
TL;DR: In this article, the authors take up Chris Freeman's challenge of facing the environmental limits with science, technology and innovation in order to keep open the possibilities of the developing world along a sustainable "green" growth path.
Journal ArticleDOI
Methods to Reduce Ambipolar Current of Various TFET Structures: a Review
Shreyas Tiwari,Rajesh Saha +1 more
TL;DR: In this article, the impact of interface trap charges on electrical parameters for various TFET architectures are studied using Gaussian and Uniform doping profile. And various techniques to mitigate the ambipolar current in TFET through various engineering technique like structural engineering, drain engineering, dielectric engineering etc.
References
More filters
Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.