Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
Reads0
Chats0
TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
More filters
Journal ArticleDOI
A non-uniform silicon TFET design with dual-material source and compressed drain
TL;DR: In this article, a non-uniform channel with double-material source and compressed drain TFET structure is introduced, and the simulation results show that the proposed structure has a minimum point SS of 9mV/decade and an average SS of 22mV /decade for a wide range of gate voltages.
Journal ArticleDOI
Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
Pengfei Guo,Yue Yang,Yuanbing Cheng,Genquan Han,Jisheng Pan,Ivana,Zheng Zhang,Hailong Hu,Zexiang Shen,C. K. Chia,Yee-Chia Yeo +10 more
TL;DR: In this article, high quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition tool.
Journal ArticleDOI
Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance
Kanchan Cecil,Jawar Singh +1 more
TL;DR: In this paper, the influence of low band gap Germanium (Ge) instead of Silicon (Si) as a source region material in dopingless (DL) tunnel field effect transistor (DLTFET) was investigated.
Journal ArticleDOI
Approach to suppress ambipolarity and improve RF and linearity performances on ED-Tunnel FET
TL;DR: A dual metal bipolar gate-based electrically doped tunnel field-effect transistor (DMBG-ED-TFET) which overcomes the ambipolarity issue and gives improved radio frequency (RF) and linearity metrics.
Journal ArticleDOI
High-k double gate junctionless tunnel FET with a tunable bandgap
TL;DR: In this article, the performance of a heterostructure double gate junctionless tunnel FET (HJL-DGTFET) having a tunable source bandgap has been analyzed using a 2D simulation technique.
References
More filters
Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.