Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Performance Analysis of a Charge Plasma Junctionless Nanotube Tunnel FET Including the Negative Capacitance Effect
TL;DR: In this article, the negative capacitance phenomenon was used in a charge-plasma junctionless nanotube tunnel field effect transistor (CP-JLTFET) to reduce the power supply voltage and minimise the power dissipation.
Journal ArticleDOI
Fast Yet Quantum-Efficient Few-Layer Vertical MoS2 Photodetectors
TL;DR: In this article, a vertical few layer molybdenum disulfide (MoS2) photodevices with semitransparent metallic electrodes is proposed for photocurrent generation.
Proceedings ArticleDOI
PROCEED: A pareto optimization-based circuit-level evaluator for emerging devices
TL;DR: A new framework, PROCEED, and metrics for accurate device-circuit co-evaluation through proper optimization of digital circuit benchmarks are proposed and it is deployed to assess novel tunneling transistors (TFETs) compared to conventional CMOS.
Journal ArticleDOI
Heat capacity and electrical conductivity of plasmon excitations
TL;DR: In this paper, the heat capacity and electrical conductivity of plasmon excitations in an arbitrary degenerate electron gas were calculated by using the linearized Schrodinger-Poisson model.
Journal ArticleDOI
Junctionless nanowire TFET with built-in N-P-N bipolar action: Physics and operational principle
TL;DR: In this paper, a junctionless nanowire tunneling FET (JN-TFET) was proposed, in which the source region was divided into an n+ as well as a p+ type region.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.