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Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
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Colloquium: Strong-field phenomena in periodic systems
TL;DR: In this article, a review of recent experimental advances in the study of strong-field dynamics in crystals and nanostructures is presented, along with several avenues toward measuring and controlling electronic processes up to petahertz frequencies.
Journal ArticleDOI
2D materials for spintronic devices
TL;DR: This review discusses various 2D materials, including graphene and other inorganic 2D semiconductors, in the context of scientific and technological advances in spintronic devices and introduces the spin-orbit and spin-valley coupled properties of 2D material to explore their potential to address the crucial issues of contemporary electronics.
Journal ArticleDOI
Attosecond nonlinear polarization and light–matter energy transfer in solids
A. Sommer,Elisabeth M. Bothschafter,Elisabeth M. Bothschafter,Elisabeth M. Bothschafter,Shunsuke A. Sato,Clemens Jakubeit,T. Latka,Olga Razskazovskaya,Hanieh Fattahi,M. Jobst,Wolfgang Schweinberger,Wolfgang Schweinberger,V. Shirvanyan,Vladislav S. Yakovlev,Vladislav S. Yakovlev,Reinhard Kienberger,Kazuhiro Yabana,Nicholas Karpowicz,Martin Schultze,Martin Schultze,Ferenc Krausz,Ferenc Krausz +21 more
TL;DR: It is demonstrated that attosecond metrology extends the resolution to petahertz frequencies of visible light and Quantitative determination of dissipation within a signal manipulation cycle of only a few femtoseconds duration reveals the feasibility of dielectric optical switching at clock rates above 100 teraherz.
Journal ArticleDOI
Physical principles for scalable neural recording
Adam H. Marblestone,Bradley M. Zamft,Yael G. Maguire,Mikhail G. Shapiro,Thaddeus R Cybulski,Joshua I. Glaser,Dario Amodei,P. Benjamin Stranges,Reza Kalhor,David Allen Dalrymple,Dongjin Seo,Elad Alon,Michel M. Maharbiz,Jose M. Carmena,Jan M. Rabaey,Edward S. Boyden,George M. Church,Konrad P. Kording,Konrad P. Kording +18 more
TL;DR: In this paper, the authors analyze the scalability of each method, concentrating on the limitations imposed by spatio-temporal resolution, energy dissipation, and volume displacement, and find that all existing approaches require orders of magnitude improvement in key parameters.
Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
References
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Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
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Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.