Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Bandgap Engineering and Strain Effects of Core–Shell Tunneling Field-Effect Transistors
TL;DR: In this article, the authors investigated the DC characteristics of n-type SiGe heterojunction nanowire tunneling field effect transistors (TFETs) adopting a core-shell structure using 3-D numerical simulation.
Journal ArticleDOI
Nucleation of copper nanoparticles on quartz as catalysts to grow single-walled carbon nanotube arrays
TL;DR: In this article, instead of pre-patterning catalysts on the substrates, Cu are evaporated under the reductive atmosphere of H 2 and nucleated on the surface of quartz to form nanoparticles catalyzing the SWNT growth.
Dissertation
Electrical performance and use in logic of printed current switching transistors employing nanostructured silicon
TL;DR: In this paper, a fully printed current-driven switch, referred to here as a Current Switching Transistor (CST), has been demonstrated to operate as a two-way switch for both direct (DC) and alternating current.
Journal ArticleDOI
Performance enhancement in a novel amalgamation of arsenide/antimonide tunneling interface with charge plasma junctionless-TFET
Samriti Sharma,Rishu Chaujar +1 more
TL;DR: In this article, a novel combination of an arsenide/antimonide tunneling interface using binary (InAs) and ternary (AlGaSb) compound semiconducting materials and junctionless tunnel field effect transistor (JLFET) has been explored to induce a charge-plasma based tunable bandgap source/channel (S/C) interface.
Journal ArticleDOI
Demonstration of Tunneling Field-Effect Transistor Ternary Inverter
TL;DR: Tunnel FET-based ternary CMOS (T-CMOS) which can operate at supply voltage and the hump plays a role to make the steeper output voltage transitions by increasing the drain voltages.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.