Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
More Accurate and Reliable Extraction of Tunneling Resistance in Tunneling FET and Verification in Small-Signal Circuit Operation
TL;DR: In this article, a method of extracting tunneling resistance from a tunneling FET (TFET) is proposed and verified by small-signal analysis based on radiofrequency (RF) data.
Journal ArticleDOI
Projected Performance of Heterostructure Tunneling FETs in Low Power Microwave and mm-Wave Applications
TL;DR: In this paper, the characteristics of heterostructure tunneling FETs (HTFETs) at microwave and mm-wave frequencies are reviewed and their simulated performance in a variety of prototype circuits is presented.
Journal ArticleDOI
Analytical Current Transport Modeling of Monolayer Molybdenum Disulfide-Based Dual Gate Tunnel Field Effect Transistor
TL;DR: In this article, a current transport model of MoS2-based dual gate tunnel field effect transistor is presented for both analytical and numerical techniques, and the output characteristics have been compared with the quantum mechanical solution obtained from non-equilibrium Green's function formalism.
Journal ArticleDOI
A Charge Plasma-Based Monolayer Transition Metal Dichalcogenide Tunnel FET
TL;DR: A device design guideline for sub-10-nm channel length TFETs is presented and the circuit level metrics of the proposed structure are estimated by calculating delay and energy-delay product of a 45-stage inverter chain.
Journal ArticleDOI
A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS
TL;DR: In this article, a novel dynamically configurable, electrostatically doped silicon nanowire impact ionization MOS (E-SiNW-IMOS) based on dopant-free technology is investigated.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.