Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Carbon Nanotubes: Present and Future Commercial Applications
Michael De Volder,Michael De Volder,Michael De Volder,Sameh Tawfick,Sameh Tawfick,Ray H. Baughman,A. John Hart,A. John Hart +7 more
TL;DR: Although not yet providing compelling mechanical strength or electrical or thermal conductivities for many applications, CNT yarns and sheets already have promising performance for applications including supercapacitors, actuators, and lightweight electromagnetic shields.
Journal ArticleDOI
Electronics based on two-dimensional materials
Gianluca Fiori,Francesco Bonaccorso,Giuseppe Iannaccone,Tomas Palacios,Daniel Neumaier,Alan Seabaugh,Sanjay K. Banerjee,Luigi Colombo +7 more
TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
Journal ArticleDOI
A subthermionic tunnel field-effect transistor with an atomically thin channel.
Deblina Sarkar,Xuejun Xie,Wei Liu,Wei Cao,Jiahao Kang,Yongji Gong,Stephan Kraemer,Pulickel M. Ajayan,Kaustav Banerjee +8 more
TL;DR: This paper demonstrates band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-dimensional semiconductor, that exhibit steep turn-on and is the only planar architecture tunnel-fET to achieve subthermionic subthreshold swing over four decades of drain current, and is also the only tunnel- FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts.
Journal ArticleDOI
A III–V nanowire channel on silicon for high-performance vertical transistors
TL;DR: Surrounding-gate transistors using core–multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability.
Journal ArticleDOI
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Xudong Wang,Xudong Wang,Peng Wang,Jianlu Wang,Weida Hu,Xiaohao Zhou,Nan Guo,Hai Huang,Shuo Sun,Hong Shen,Tie Lin,Minghua Tang,Lei Liao,Anquan Jiang,Jinglan Sun,Xiangjian Meng,Xiaoshuang Chen,Wei Lu,Junhao Chu +18 more
TL;DR: A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved, tuned by the ultrahigh electrostatic field from the ferroelectric polarization.
References
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Journal ArticleDOI
Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
TL;DR: In this paper, the performance of ultra-thin body SOI tunnel FETs is investigated depending on channel length, gate oxide thickness, and source/drain doping concentrations, and experimental results match calculations based on a simple Landauer model employing the Wenzel-Kramer-Brillouin approximation.
Journal ArticleDOI
Si-InAs heterojunction Esaki tunnel diodes with high current densities
M. T. Bjork,Heinz Schmid,Cedric D Bessire,Kirsten E. Moselund,H. Ghoneim,Siegfried Karg,Emanuel Lörtscher,Heike Riel +7 more
TL;DR: In this paper, Si-InAs heterojunction p-n diodes were fabricated by growing InAs nanowires in oxide mask openings on silicon substrates, from which a valence band offset between Si and InAs of 130 meV was extracted.
Proceedings ArticleDOI
Prospect of tunneling green transistor for 0.1V CMOS
Chenming Hu,Pratik Patel,Anupama Bowonder,Kanghoon Jeon,Sung Hwan Kim,Wei-Yip Loh,Chang Yong Kang,Jungwoo Oh,Prashant Majhi,Ali Javey,Tiehui Liu,Raj Jammy +11 more
TL;DR: In this article, a tunneling green transistor was designed to enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8″ wafers.
Proceedings ArticleDOI
A novel concept for field-effect transistors - the tunneling carbon nanotube FET
Joachim Knoch,Joerg Appenzeller +1 more
Journal ArticleDOI
Experimental Staggered-Source and N+ Pocket-Doped Channel III-V Tunnel Field-Effect Transistors and Their Scalabilities
Dheeraj Mohata,S. Mookerjea,Ashish Agrawal,Yuanyuan V. Li,Theresa S. Mayer,Vijaykrishnan Narayanan,Amy W. K. Liu,Dmitri Loubychev,J. M. Fastenau,Suman Datta +9 more
TL;DR: In this article, the authors demonstrate 100% enhancement in drive current (ION) over In0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb 0.5.