Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Junction-less charge plasma TFET with dual drain work functionality for suppressing ambipolar nature and improving radio-frequency performance
TL;DR: In this paper, a junction-less tunnel field effect transistor (JL TFET) was proposed to reduce the ambipolar conduction and improve the high-frequency performance of the device.
Journal ArticleDOI
A novel gate engineered L-shaped dopingless tunnel field-effect transistor
TL;DR: In this article, an L-shaped DL-TFET with gate engineering technique is proposed, where the space between the source and the gate electrodes can be further optimized to reduce the tunneling distance, and hence boost the drive current.
Journal ArticleDOI
InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current
Yue Peng,Genquan Han,Hongjuan Wang,Zhang Chunfu,Yan Liu,Yibo Wang,Shenglei Zhao,Jincheng Zhang,Yue Hao +8 more
TL;DR: In this paper, the InN/In 0.75 Ga 0.25 N complementary heterojunction-enhanced tunneling field effect transistors (HE-TFETs) were characterized using the numerical simulation.
Journal ArticleDOI
Tunnel FET Analog Benchmarking and Circuit Design
TL;DR: A platform for benchmarking tunnel field-effect transistors (TFETs) for analog applications is presented and used to compare selected TFETs to FinFET technology at the 14-nm node to reveal promising directions for the system development.
Journal ArticleDOI
Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
TL;DR: In this article, a Ge/Si heterojunction L-shaped tunnel field effect transistor combined with hetero-gate-dielectric (GHL-TFET) is proposed and investigated by TCAD simulation.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.