Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation
Zhong Lin,Yu Lei,Shruti Subramanian,Natalie Briggs,Yuanxi Wang,Chun-Li Lo,Eilam Yalon,David Lloyd,Sanfeng Wu,Kristie J. Koski,Richard Clark,Saptarshi Das,Robert M. Wallace,Thomas F. Kuech,Joseph Scott Bunch,Xiaoqin Li,Zhihong Chen,Eric Pop,Vincent H. Crespi,Joshua A. Robinson,Mauricio Terrones +20 more
TL;DR: In this article, a review article was presented based on contents discussed in the 5th annual Graphene and Beyond workshop held at Pennsylvania State University, which was sponsored by Corning, Morgan Advanced Materials, APL Materials, CVD Equipment Corporation, and FEI.
Journal ArticleDOI
Building Brain-Inspired Logic Circuits from Dynamically Switchable Transition-Metal Oxides
TL;DR: In this article, the authors review current understanding of the mechanisms underpinning electronic instabilities, discuss methods for modulation of spiking behavior through tuning of atomistic and electronic structure, and highlight the need for establishing deterministic and independent control of transformation characteristics such as switching magnitude, energy thresholds, heat dissipation, hysteresis and dynamics of relaxation.
Journal ArticleDOI
Prospects of Hysteresis-Free Abrupt Switching (0mV/dec) in Landau Switches
Ankit Jain,Muhammad A. Alam +1 more
TL;DR: In this paper, the authors provide an intuitive classification of all charge-based switches in terms of their energy landscapes and identify two-well energy landscape as the characteristic feature of Landau switches and conclude that a flat energy landscape is essential for hysteresis-free abrupt switching.
Journal ArticleDOI
A Novel Four-Terminal Ferroelectric Tunnel FET for Quasi-Ideal Switch
Mirgender Kumar,Satyabrata Jit +1 more
TL;DR: In this article, a novel four-terminal ferroelectric tunnel field effect transistor (4T Fe-TFET) on SOI substrates where an extra tunnel-gate (T-Gate) isolated from the main drive gate has been placed over the source region of the TFET to achieve the steepest possible subthreshold swing (SS) characteristics below the Boltzmann limit.
Book ChapterDOI
Application of Graphene Within Optoelectronic Devices and Transistors
TL;DR: In this article, the authors discuss various designs of transistors, including those which incorporate carbon nanotubes (CNTs), and others which exploit the idea of quantum tunneling.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.