Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics.
Qilin Hua,Qilin Hua,Guoyun Gao,Chunsheng Jiang,Jinran Yu,Junlu Sun,Taiping Zhang,Bin Gao,Weijun Cheng,Renrong Liang,He Qian,Weiguo Hu,Qijun Sun,Zhong Lin Wang,Zhong Lin Wang,Huaqiang Wu +15 more
TL;DR: This work presents an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary threshold switch with a two-dimensional MoS2 channel, and obtains abrupt steepness in the turn-on characteristics and 4.5 mV decade−1 subthreshold swing (over five decades).
Journal ArticleDOI
Steep switching characteristics of single-gated feedback field-effect transistors
TL;DR: The authors' proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec-1, an on/off current ratio of approximately 1011, and an on-current of approximately 10-4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices.
Journal ArticleDOI
Low-power tunnel field effect transistors using mixed As and Sb based heterostructures
Yan Zhu,Mantu K. Hudait +1 more
TL;DR: In this article, a review of low-power TFETs using mixed arsenide/antimonide (As/Sb) based heterostructures including basic working principles, design considerations, material growth, interface engineering, material characterization, device fabrication, device performance investigation, band alignment determination, and high temperature reliability is presented.
Book
Nanowire Transistors: Physics of Devices and Materials in One Dimension
TL;DR: In this article, the authors present a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices, including a unified framework and language to accelerate scientific and technological developments across the two fields.
Journal ArticleDOI
Pseudopotential calculations of strained-GeSn/SiGeSn hetero-structures
Saurabh Sant,Andreas Schenk +1 more
TL;DR: In this article, the pseudopotential parameters for α-sn and SiGeSn were derived and used to extract various band structure quantities required to model band-to-band tunneling in simulating GeSn/SiGeSn hetero-junction TFETs.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.