Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
Reads0
Chats0
TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
More filters
Journal ArticleDOI
Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors.
TL;DR: This work reports a black phosphorus (BP) heterojunction (HJ) TFET that exhibits a record high I60 and demonstrates the influence of the tunnel barrier contact on device performance, paving the way for the development of ultrafast low-power logic circuits beyond CMOS capabilities.
Journal ArticleDOI
Modeling direct interband tunneling. II. Lower-dimensional structures
Andrew Pan,Chi On Chui +1 more
TL;DR: In this paper, the applicability of the two-band Hamiltonian and the widely used Kane analytical formula to interband tunneling along unconfined directions in nanostructures was investigated.
Journal ArticleDOI
Threshold voltage extraction in Tunnel FETs
Adelmo Ortiz-Conde,Francisco J. García-Sánchez,Juan Muci,Andrea Sucre-González,Joao Antonio Martino,Paula Ghedini Der Agopian,Cor Claeys +6 more
TL;DR: In this article, two possible extrapolation-type methods to extract the threshold voltage of tunnel field effect transistors (TFETs) are proposed, which are based on defining threshold voltage as the gate voltage axis intercept of the linearly extrapolated strong conduction behavior of either CRT or H 1 functions.
Journal ArticleDOI
A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-doping
TL;DR: In this paper, a new δ-doped cylindrical gate silicon tunnel FET analytical model is developed and investigated extensively, with the aim of addressing the challenges of the conventional CG-TFET.
Journal ArticleDOI
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
Paula Ghedini Der Agopian,Paula Ghedini Der Agopian,Joao Antonio Martino,Anne Vandooren,Rita Rooyackers,Eddy Simoen,Aaron Thean,Cor Claeys +7 more
TL;DR: In this paper, the Line-TFET performance is compared with MOSFET and Point TFET devices, with different architectures (FinFET, GAA:Gate-All-Around) at both room and high temperatures.
References
More filters
Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.