Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Journal ArticleDOI
The metal–insulator phase change in vanadium dioxide and its applications
Haichang Lu,Haichang Lu,Stewart J. Clark,Yuzheng Guo,Yuzheng Guo,John Robertson,John Robertson +6 more
TL;DR: In this article, a spin-pairing model of the first-order metal-insulator transition (MIT) was proposed to estimate the transition temperature of vanadium dioxide, and the method was used to study the doping and alloying process.
Journal ArticleDOI
Normally-off Logic Based on Resistive Switches—Part II: Logic Circuits
TL;DR: A 1-bit adder is demonstrated to support the high functionality of RRAM logic and support RRAM as a promising technology for nonvolatile logic circuits beyond CMOS.
Journal ArticleDOI
Ultrashort Vertical-Channel van der Waals Semiconductor Transistors
Jinbao Jiang,Manh-Ha Doan,Linfeng Sun,Hyun Kim,Hua Yu,Min-Kyu Joo,Sanghyun Park,Heejun Yang,Dinh Loc Duong,Young Hee Lee +9 more
TL;DR: This work provides a promising route toward the complementary metal–oxide–semiconductor‐compatible fabrication of wafer‐scale 2D van der Waals transistors with high‐density integration in controllable nanometer‐scale transistors via vertical channels.
Journal ArticleDOI
Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors
Yang Wang,Xiaoyuan Bai,Junwei Chu,Hongbo Wang,Gaofeng Rao,Pan Xinqiang,Xinchuan Du,Kai Hu,Xuepeng Wang,Chuanhui Gong,Chujun Yin,Chao Yang,Yan Chaoyi,Wu Chunyang,Shuai Yao,Xianfu Wang,Min Liao,Jie Xiong +17 more
TL;DR: The LiNbO3 NC-FET platform exhibits a record-low SS of 4.97 mV dec-1 with great repeatability due to the superior capacitance matching characteristic as evidenced by the negative differential resistance phenomenon, and provides a new potential method for future highly integrated electronic and optical integrated energy-efficient devices.
Journal ArticleDOI
Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor
Jaya Madan,Rishu Chaujar +1 more
TL;DR: In this paper, a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism is presented.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.