Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
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TLDR
Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.Abstract:
Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.read more
Citations
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Patent
Field-effect apparatus and methods for sequencing nucelic acids
Bai Jingwei,Boyan Boyanov,Cheng-Yao Chen,Philip G. Collins,Kevin L. Gunderson,Mandell Jeffrey G,Sergio G. Peisajovich,Gregory A. Weiss +7 more
TL;DR: In this article, a method for sequencing nucleic acids is described, which can include polymerase catalyzed incorporation of nucleotides into a nascent nucleic acid strand against a template.
Journal ArticleDOI
Experimental $I$ – $V(T)$ and $C$ – $V$ Analysis of Si Planar p-TFETs on Ultrathin Body
Chang Liu,Qinghua Han,S. Glass,G. V. Luong,Keyvan Narimani,A. T. Tiedemann,A. Fox,Wenjie Yu,Xi Wang,Siegfried Mantl,Qing-Tai Zhao +10 more
TL;DR: In this paper, the experimental analysis of planar Si p-tunnel FETs (TFETs) fabricated on ultrathin body silicon on insulator (SOI) substrates by an optimized dopant implantation into silicide process is presented.
Journal ArticleDOI
Right-Angle Black Phosphorus Tunneling Field Effect Transistor
TL;DR: In this article, a right-angle black phosphorus (BP) tunneling field effect transistor (TFET) was demonstrated, which utilizes the effective mass anisotropy between the armchair and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling.
Journal ArticleDOI
Impact of interface traps on direct and alternating current in tunneling field-effect transistors
TL;DR: The results show that the donor-type and acceptor-type ITs have the great influence on DC characteristic at midgap, and the flat band shift changes obviously and differently in the AC analysis, which results in contrast of peak shift of Miller capacitor Cgd for n-type TFETs with donor-like andacceptor-like ITs.
Journal ArticleDOI
Effects of substrate leakage and drain-side thermal barriers in In0.53Ga0.47As/GaAs0.5Sb0.5 quantum-well tunneling field-effect transistors
TL;DR: In this paper, the leakage current and the ON-state characteristics of In0.53Ga0.47As/GaAs 0.5Sb0.5 quantum-well tunneling field-effect transistors (QWTFETs) are examined on the basis of temperature-dependent measurements.
References
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Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
A theory of the electrical breakdown of solid dielectrics
TL;DR: In this paper, two distinct mechanisms have been suggested for the sudden increase of the number of electrons in an unfilled band, which occurs when the field strength passes a critical value, analogous to the electrical breakdown of gases.