Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Exome sequencing of desmoplastic melanoma identifies recurrent NFKBIE promoter mutations and diverse activating mutations in the MAPK pathway.

Abstract: Desmoplastic melanoma is an uncommon variant of melanoma with sarcomatous histology, distinct clinical behavior and unknown pathogenesis. We performed low-coverage genome and high-coverage exome sequencing of 20 desmoplastic melanomas, followed by targeted sequencing of 293 genes in a validation cohort of 42 cases. A high mutation burden (median of 62 mutations/Mb) ranked desmoplastic melanoma among the most highly mutated cancers. Mutation patterns strongly implicate ultraviolet radiation as the dominant mutagen, indicating a superficially located cell of origin. Newly identified alterations included recurrent promoter mutations of NFKBIE, encoding NF-κB inhibitor ɛ (IκBɛ), in 14.5% of samples. Common oncogenic mutations in melanomas, in particular in BRAF (encoding p.Val600Glu) and NRAS (encoding p.Gln61Lys or p.Gln61Arg), were absent. Instead, other genetic alterations known to activate the MAPK and PI3K signaling cascades were identified in 73% of samples, affecting NF1, CBL, ERBB2, MAP2K1, MAP3K1, BRAF, EGFR, PTPN11, MET, RAC1, SOS2, NRAS and PIK3CA, some of which are candidates for targeted therapies.

Apparatus and method for detecting voice based on motion information

Abstract: Disclosed are an apparatus and method of deducing a user's intention using motion information. The user's intention deduction apparatus includes a speech intention determining unit configured to predict a speech intention regarding a user's speech using motion information sensed by at least one motion capture sensor, and a controller configured to control operation of detecting a voice section from a received sound signal based on the predicted speech intention.

Effects of Cu/Al intermetallic compound (IMC) on copper wire and aluminum pad bondability

Abstract: Copper wire bonding is an alternative interconnection technology that serves as a viable, and cost saving alternative to gold wire bonding. Its excellent mechanical and electrical characteristics attract the high-speed, power management devices and fine-pitch applications. Copper wire bonding can be a potentially alternative interconnection technology along with flip chip interconnection. However, the growth of Cu/Al intermetallic compound (IMC) at the copper wire and aluminum interface can induce a mechanical failure and increase a potential contact resistance. In this study, the copper wire bonded chip samples were annealed at the temperature range from 150/spl deg/C to 300/spl deg/C for 2 to 250 h, respectively. The formation of Cu/Al IMC was observed and the activation energy of Cu/Al IMC growth was obtained from an Arrhenius plot (ln (growth rate) versus 1/T). The obtained activation energy was 26Kcal/mol and the behavior of IMC growth was very sensitive to the annealing temperature. To investigate the effects of IMC formation on the copper wire bondability on Al pad, ball shear tests were performed on annealed samples. For as-bonded samples, ball shear strength ranged from 240-260gf, and ball shear strength changed as a function of annealing times. For annealed samples, fracture mode changed from adhesive failure at Cu/Al interface to IMC layer or Cu wire itself. The IMC growth and the diffusion rate of aluminum and copper were closely related to failure mode changes. Micro-XRD was performed on fractured pads and balls to identify the phases of IMC and their effects on the ball bonding strength. From XRD results, it was confirmed that the major IMC was /spl gamma/-Cu/sub 9/Al/sub 4/ and it provided a strong bondability.

Method of Forming A Metallic Oxide Film Using Atomic Layer Deposition

Abstract: A method of forming a metallic oxide film using atomic layer deposition includes loading a substrate into a reactor, supplying a metallic source gas into the reactor and absorbing the metallic source gas onto the substrate, purging the remaining metallic source gas that does not react, with the substrate, and directly producing plasma of an N-group-containing oxide reactant gas in the reactor.

Home automation system having user controlled definition function

Abstract: A home automation system having a user controlled definition function is operated in response to input of an inherent call code. The system includes power line controller PLC modules for switching power to appliances connected thereto in response to receipt of a control code; monitoring devices for displaying input video information; a video display processing device having a font memory and a video memory for assessing font data corresponding to a character code received from the font memory in response to receipt of the character code and for providing a video signal corresponding to the assessed font data to the monitoring device; a control device for providing to the video display processing device character code corresponding to a user defined number, device name, call code, and control code in response to a set user defined function; the control device also stores the user defined number, the call code, and the control code in an address region corresponding to the user defined number, and transmits the call code and control code in response to input of the user defined number; and an interfacing device for transmitting the call code and control code output from the control device to the power line controller PLC modules.