Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Semiconductor devices and methods of fabricating the same

Abstract: A semiconductor device includes capacitors connected in parallel. Electrode active portions and a discharge active portion are defined on a semiconductor substrate, and capping electrodes are disposed respectively on the electrode active portions. A capacitor-dielectric layer is disposed between each of the capping electrodes and each of the electrode active portions that overlap each other. A counter doped region is disposed in the discharge active portion. A lower interlayer dielectric covers the entire surface of the semiconductor substrate. Electrode contact plugs respectively contact the capping electrodes through the lower interlayer dielectric, and a discharge contact plug contacts the counter doped region through the lower interlayer dielectric. A lower interconnection is disposed on the lower interlayer dielectric and contacts the electrode contact plugs and the discharge contact plug.

Highly luminescent and photostable quantum dot-silica monolith and its application to light-emitting diodes

Abstract: A highly luminescent and photostable quantum dot–silica monolith (QD–SM) substance was prepared by preliminary surface exchange of the QDs and base-catalyzed sol–gel condensation of silica. The SM was heavily doped with 6-mercaptohexanol exchanged QDs up to 12 vol % (26 wt %) without particle aggregation. Propylamine catalyst was important in maintaining the original luminescence of the QDs in the SM during sol–gel condensation. The silica layer was a good barrier against oxygen and moisture, so that the QD–SM maintained its initial luminescence after high-power UV radiation (∼1 W) for 200 h and through the 150 °C LED encapsulant curing process. Green and red light-emitting QD–SMs were applied as color-converting layers on blue LEDs, and the external quantum efficiency reached up to 89% for the green QD–SM and 63% for the red one. A white LED made with a mixture of green and red QDs in the SM, in which the color coordinate was adjusted at (0.23, 0.21) in CIE1931 color space for a backlight application, sh...

Fast Intra Mode Decision for High Efficiency Video Coding (HEVC)

Abstract: The latest High Efficiency Video Coding (HEVC) standard only requires 50% bit-rate of the H.264/AVC at the same perceptual quality, but with a significant encoder complexity increase. Hence, it is necessary and inevitable to develop fast HEVC encoding algorithms for its potential market adoption. In this paper, we propose a fast intra mode decision for the HEVC encoder. The overall fast intra mode decision algorithm consists of both micro- and macro-level schemes. At the micro-level, we propose the Hadamard cost-based progressive rough mode search (pRMS) to selectively check the potential modes instead of traversing all candidates (i.e., up to 35 in HEVC). Fewer effective candidates will be chosen by the pRMS for the subsequent rate-distortion optimized quantization (RDOQ) to derive the rate-distortion (R-D) optimal mode. An early RDOQ skip method is also introduced to further the complexity reduction. At the macrolevel, we introduce the early coding unit (CU) split termination if the estimated R-D cost [through aggregated R-D costs of (partial) sub-CUs] is already larger than the R-D cost of the current CU. On average, the proposed fast intra mode decision provides about 2.5 × speedup (without any platform or source code level optimization) with just a 1.0% Bjontegaard delta rate (BD-rate) increase using the HEVC common test condition. Moreover, our proposed solution also demonstrates the state-of-the-art performance in comparison with other works.

Method for manufacturing aluminum metal interconnection layer by atomic layer deposition method

Abstract: A method for forming an Al layer using an atomic layer deposition method is disclosed. First, a semiconductor substrate is loaded into a deposition chamber. Then, an Al source gas is supplied into the deposition chamber and the Al source gas is chemisorbed into the semiconductor substrate to form the Al layer. Next, a purge gas is supplied onto the deposition chamber without supplying the Al source gas so that the unreacted Al source gas is removed, thereby completing the Al layer. To form an Al layer to a required thickness, the step of supplying the Al source gas and the step of supplying the purge gas are repeatedly performed, thereby forming an Al atomic multilayer. Therefore, the uniformity and step coverage of the Al layer can be greatly improved.