Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

Abstract: A stretchable resistive pressure sensor is achieved by coating a compressible substrate with a highly stretchable electrode. The substrate contains an array of microscale pyramidal features, and the electrode comprises a polymer composite. When the pressure-induced geometrical change experienced by the electrode is maximized at 40% elongation, a sensitivity of 10.3 kPa(-1) is achieved.

Organic light emitting display (OLED) and its method of fabrication

Abstract: An Organic Light Emitting Display (OLED) and a method of fabricating the OLED includes: a substrate including a pixel region and a non-pixel region; a gate electrode arranged in the non-pixel region of the substrate; a first insulating layer arranged on the substrate having the gate electrode formed thereon, and having an open groove on an upper surface of a region opposite to the gate electrode; a semiconductor layer buried in the groove and including a source region, a channel region and a drain region; and an organic thin film layer arranged in the pixel region of the substrate. A common electrode is arranged between the drain region of the semiconductor layer and the organic thin film layer to electrically couple the drain region to the organic thin film layer.

Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays

Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

Abstract: Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical “stacking” to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm2/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics.

Nanomaterials for theranostics: recent advances and future challenges.

Abstract: Challenges Eun-Kyung Lim,†,‡,§ Taekhoon Kim, Soonmyung Paik, Seungjoo Haam, Yong-Min Huh,*,† and Kwangyeol Lee* Department of Chemistry, Korea University, Seoul 136-701, Korea †Department of Radiology, Yonsei University, Seoul 120-752, Korea Severance Biomedical Research Institute, Yonsei University College of Medicine, Seoul 120-749, Korea Division of Pathology, NSABP Foundation, Pittsburgh, Pennsylvania 15212, United States Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 120-749, Korea ‡BioNanotechnology Research Center, Korea Research Institute of Bioscience and Biotechnology, Daejeon 305-806, Korea Electronic Materials Laboratory, Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea