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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Proceedings ArticleDOI
17 Jun 2012
TL;DR: This paper considers both beamforming and multi-stream precoding in single user systems with large mmWave antenna arrays at both transmitter and receiver and shows that the unconstrained capacity-achieving precoding solutions converge to simple beam steering solutions.
Abstract: Millimeter wave (mmWave) systems must overcome the heavy attenuation at high frequency to support high-throughput wireless communication. The small wavelength in mmWave systems enables beamforming using large antenna arrays to combat path loss with large array gain. Beamforming in traditional microwave systems is often done at baseband for maximum flexibility. Such baseband processing requires a dedicated transceiver chain per antenna element. The high cost of radio frequency (RF) chains in mmWave systems, however, makes supporting each antenna with a dedicated RF chain expensive. This mismatch between the number of antennas and transceiver chains makes baseband processing infeasible; thus mmWave systems typically rely on a traditional approach known as beam steering which can be done at RF using inexpensive phase shifters. Unlike baseband precoding, however, traditional beam steering is not explicitly designed to achieve the capacity of the mmWave channel. In this paper, we consider both beamforming and multi-stream precoding in single user systems with large mmWave antenna arrays at both transmitter and receiver. Using a realistic channel model, we show that the unconstrained capacity-achieving precoding solutions converge to simple beam steering solutions. Therefore, in large mmWave systems, no rate loss is incurred by adopting the traditional lower-complexity solution.

246 citations

Patent
Hyun-chung Kim1, Eun-Hye Lee1
28 Aug 2007
TL;DR: In this article, a method for providing a menu and a multimedia device using the method is described, which includes converting a menu set including at least one icon displayed on a touch screen into a manipulation set.
Abstract: A method for providing a menu and a multimedia device using the method are provided. The method for providing a menu includes converting a menu set including at least one icon displayed on a touch screen into a manipulation set including at least one manipulation icon used to input a command relating to the use of content. Therefore, the method provides for a more easily manipulated menu, which is displayed with superior visual effect on a screen that is relatively small in size by using the menu set capable of conversion into the manipulation set.

246 citations

Journal ArticleDOI
TL;DR: In this article, the preparation of ferroelectric polymer-metallic nanowire composite nanofiber triboelectric layers is described for use in high-performance TENGs.
Abstract: The preparation of ferroelectric polymer–metallic nanowire composite nanofiber triboelectric layers is described for use in high-performance triboelectric nanogenerators (TENGs). The electrospun polyvinylidene fluoride (PVDF)–silver nanowire (AgNW) composite and nylon nanofibers are utilized in the TENGs as the top and bottom triboelectric layers, respectively. The electrospinning process facilitates uniaxial stretching of the polymer chains, which enhances the formation of the highly oriented crystalline β-phase that forms the most polar crystalline phase of PVDF. The addition of AgNWs further promotes the β-phase crystal formation by introducing electrostatic interactions between the surface charges of the nanowires and the dipoles of the PVDF chains. The extent of β-phase formation and the resulting variations in the surface charge potential upon the addition of nanowires are systematically analyzed using X-ray diffraction (XRD) and Kelvin probe force microscopy techniques. The ability of trapping the induced tribocharges increases upon the addition of nanowires to the PVDF matrix. The enhanced surface charge potential and the charge trapping capabilities of the PVDF–AgNW composite nanofibers significantly enhance the TENG output performances. Finally, the mechanical stability of the electrospun nanofibers is dramatically enhanced while maintaining the TENG performances by applying thermal welding near the melting temperature of PVDF.

245 citations

Patent
27 Jun 2005
TL;DR: In this article, a liquid crystal display device comprises at least two insulating layers formed on a first conductive layer, an upper insulating layer formed on the second layer, and a bridge electrode formed of a third layer connecting the first and second conductive layers.
Abstract: A liquid crystal display device comprises at least two insulating layers formed on a first conductive layer, a second conductive layer formed between the at least two insulating layers, a first contact hole penetrating an upper insulating layer of the at least two insulating layers on the second conductive layer, a second contact hole penetrating the at least two insulating layers and exposing a portion of the first conductive layer, and a contact part comprising a bridge electrode formed of a third conductive layer for connecting the first and second conductive layers through the first and second contact holes. The second contact hole comprises an internal hole penetrating the at least two insulating layers and an external hole surrounding the internal hole forming in the upper insulating layers.

245 citations

Journal ArticleDOI
16 Sep 2014
TL;DR: The use of barrier-engineered materials and gate all-around structure in the 3D V-NAND cell exhibits advantages over 1 × nm planar NAND, such as small Vth shift due to small cell coupling and narrow natural Vth distribution.
Abstract: In the past few years, various 3D NAND Flash memories have been demonstrated, from device feasibility to chip implementation, to overcome scaling challenges in conventional planar NAND Flash [1-3]. The difficulties include shrinking the NAND cell and increasing manufacturing costs due to quadruple patterning and extreme ultraviolet lithography, motivating the development of the next-generation node beyond 16nm-class NAND Flash [4]. In this paper, as a new 3D memory device with lower manufacturing cost and superior device scalability, we present a true 3D 128Gb 2b/cell vertical-NAND (V-NAND) Flash. The chip accomplishes 50MB/s write throughput with 3K endurance for typical embedded applications such as mobile and personal computer. Also, extended endurance of 35K is achieved with 33MB/s of write throughput for data center and enterprise SSD applications.

245 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,060
20205,735
20195,994
20185,885