Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Robust $L_{2}E$ Estimation of Transformation for Non-Rigid Registration

Abstract: We introduce a new transformation estimation algorithm using the $L_{2}E$ estimator and apply it to non-rigid registration for building robust sparse and dense correspondences. In the sparse point case, our method iteratively recovers the point correspondence and estimates the transformation between two point sets. Feature descriptors such as shape context are used to establish rough correspondence. We then estimate the transformation using our robust algorithm. This enables us to deal with the noise and outliers which arise in the correspondence step. The transformation is specified in a functional space, more specifically a reproducing kernel Hilbert space. In the dense point case for nonrigid image registration, our approach consists of matching both sparsely and densely sampled SIFT features, and it has particular advantages in handling significant scale changes and rotations. The experimental results show that our approach greatly outperforms state-of-the-art methods, particularly when the data contains severe outliers.

Liquid crystal display and method of manufacturing the same

Abstract: A liquid crystal display includes a first substrate, a second substrate, a liquid crystal material interposed between the first and second substrates. The liquid crystal display includes first protrusions and second protrusions that are alternately disposed with each other on the first substrate. A common electrode is provided at a side part of the first protrusions, and a pixel electrode is provided at a side part of the second protrusions to face the common electrode. A lateral electric field is generated between the common electrode and the pixel electrode facing each other for controlling an alignment of molecules of the liquid crystal material.

High performance PRAM cell scalable to sub-20nm technology with below 4F2 cell size, extendable to DRAM applications

Abstract: A PRAM cell with great scalability and high speed operation capability with excellent reliability below 20nm technology was demonstrated. This has the meaning of the potential applicable to the technology area of scaling limitation of DRAM cell. We fabricated a confined PRAM cell with 7.5nm×17nm of below 4F2. In particular, Sb-rich Ge-Sb-Te phase change material was employed for high speed operation below 30nsec. The excellent writing endurance performance was predicted to maintain up to 6.5E15cycles by reset program energy acceleration. Its data retention was 4.5 years at 85°C which is enough for DRAM application.

Si/Ge double-layered nanotube array as a lithium ion battery anode.

Abstract: Problems related to tremendous volume changes associated with cycling and the low electron conductivity and ion diffusivity of Si represent major obstacles to its use in high-capacity anodes for lithium ion batteries. We have developed a group IVA based nanotube heterostructure array, consisting of a high-capacity Si inner layer and a highly conductive Ge outer layer, to yield both favorable mechanics and kinetics in battery applications. This type of Si/Ge double-layered nanotube array electrode exhibits improved electrochemical performances over the analogous homogeneous Si system, including stable capacity retention (85% after 50 cycles) and doubled capacity at a 3C rate. These results stem from reduced maximum hoop strain in the nanotubes, supported by theoretical mechanics modeling, and lowered activation energy barrier for Li diffusion. This electrode technology creates opportunities in the development of group IVA nanotube heterostructures for next generation lithium ion batteries.