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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Journal ArticleDOI
TL;DR: It is demonstrated that the surface of the copper is surrounded by amorphous CuO and that poly(vinylpyrrolidone) is chemisorbed on the copper surface.

552 citations

Journal ArticleDOI
TL;DR: In this paper, a high-speed visible light communications link that uses a white-light light-emitting diode (LED) was described, and a data rate of 100 Mb/s was achieved using on-off keying non-return-to-zero modulation.
Abstract: This letter describes a high-speed visible light communications link that uses a white-light light-emitting diode (LED). Such devices have bandwidths of few megahertz, severely limiting the data rates of any communication system. Here, we demonstrate that by detecting only the blue component of the LED, and using a simple first-order analogue equalizer, a data rate of 100 Mb/s can be achieved using on-off keying nonreturn-to-zero modulation.

547 citations

Proceedings ArticleDOI
05 Jun 2017
TL;DR: In this paper, the authors demonstrate that horizontally stacked gate-all-around (GAA) nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond.
Abstract: In this paper, for the first time we demonstrate that horizontally stacked gate-all-around (GAA) Nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond. It offers increased W eff per active footprint and better performance compared to FinFET, and with a less complex patterning strategy, leveraging EUV lithography. Good electrostatics are reported at L g =12nm and aggressive 44/48nm CPP (Contacted Poly Pitch) ground rules. We demonstrate work function metal (WFM) replacement and multiple threshold voltages, compatible with aggressive sheet to sheet spacing for wide stacked sheets. Stiction of sheets in long-channel devices is eliminated. Dielectric isolation is shown on standard bulk substrate for sub-sheet leakage control. Wrap-around contact (WAC) is evaluated for extrinsic resistance reduction.

547 citations

Journal ArticleDOI
27 Jun 2005-Polymer
TL;DR: In this article, a mixture of α-helical and random coil conformation of gelatin nanofibers was used for the dissolution of gelatin in electrospinning and the results showed that the structure of the nanofiber was amorphous with very low crystallinity.

547 citations

Journal ArticleDOI
TL;DR: A hybrid-fiber nanogenerator comprising a ZnO nanowire array, PVDF polymer and two electrodes is presented, which may inspire future research in wearable energy-harvesting technology.
Abstract: A hybrid-fiber nanogenerator comprising a ZnO nanowire array, PVDF polymer and two electrodes is presented. Depending on the bending or spreading action of the human arm, at an angle of ∼90°, the hybrid fiber reaches electrical outputs of ∼0.1 V and ∼10 nA cm(-2) . The unique structure of the hybrid fiber may inspire future research in wearable energy-harvesting technology.

546 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,060
20205,735
20195,994
20185,885