Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Method for manufacturing thin film using atomic layer deposition

Abstract: A thin film manufacturing method is provided. The method includes the step of chemically adsorbing a first reactant on a substrate by injecting the first reactant into a chamber in which the substrate is loaded. Physisorbed first reactant on the chemically adsorbed first reactant is removed by purging or pumping the chamber. After the first reactant is densely chemically adsorbed on the substrate by re-injecting the first reactant into the chamber, the physisorbed first reactant on the dense chemisorbed first reactant is removed by purging or pumping the chamber. A second reactant is chemically adsorbed onto the surface of the substrate by injecting the second reactant into the chamber. Physisorbed second reactant on the chemisorbed first reactant and the second reactant is removed by purging or pumping the chamber. A solid thin film is formed by chemical exchange through densely adsorbing the second reactant onto the substrate by re-injecting the second reactant into the chamber. According to the present invention, it is possible to obtain a precise stoichiometric thin film having a high film density, since the first reactant and the second reactant are densely adsorbed and the impurities are substantially removed by pumping or purging

High-Bandwidth Sensorless Algorithm for AC Machines Based on Square-Wave-Type Voltage Injection

Abstract: This paper describes a new control algorithm which can enhance the dynamics of a sensorless control system and gives a precise sensorless control performance. Instead of the conventional sinusoidal-type voltage injection, a square-wave-type voltage injection incorporated with the associated signal processing method is proposed in this paper. As a result, the error signal can be calculated without low-pass filters and time delays, and the position estimation performance can be enhanced. Using the proposed method, the performance of the sensorless control can be enhanced; the bandwidth of the current controller was enhanced up to 250 Hz, and that of the speed controller was up to 50 Hz.

Intercalation-conversion hybrid cathodes enabling Li–S full-cell architectures with jointly superior gravimetric and volumetric energy densities

Abstract: A common practise in the research of Li–S batteries is to use high electrode porosity and excessive electrolytes to boost sulfur-specific capacity. Here we propose a class of dense intercalation-conversion hybrid cathodes by combining intercalation-type Mo6S8 with conversion-type sulfur to realize a Li–S full cell. The mechanically hard Mo6S8 with fast Li-ion transport ability, high electronic conductivity, active capacity contribution and high affinity for lithium polysulfides is shown to be an ideal backbone to immobilize the sulfur species and unlock their high gravimetric capacity. Cycling stability and rate capability are reported under realistic conditions of low carbon content (~10 wt%), low electrolyte/active material ratio (~1.2 µl mg−1), low cathode porosity (~55 vol%) and high mass loading (>10 mg cm−2). A pouch cell assembled based on the hybrid cathode and a 2× excess Li metal anode is able to simultaneously deliver a gravimetric energy density of 366 Wh kg−1 and a volumetric energy density of 581 Wh l−1. Despite tremendous progress in the development of LiS batteries, their performance at the full-cell level is not as competitive as state-of-the-art Li-ion batteries. Here the authors report a full-cell architecture making use of a hybrid intercalation-conversion cathode, enabling both high volumetric and gravimetric energy densities.

A novel cell technology using N-doped GeSbTe films for phase change RAM

Abstract: The Ge/sub 2/Sb/sub 2/Te/sub 5/ (GST) thin film is well known to play a critical role in PRAM (Phase Change Random Access Memory). Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we tried to increase the GST resistivity by doping nitrogen. Doping nitrogen to GST successfully reduced writing current. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen.

Magnetoresistive Random Access Memory

Abstract: In this paper, a review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.