Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Block diagonalization for multi-user MIMO with other-cell interference

Abstract: Block diagonalization is one approach for linear preceding in the multiple-input multiple-output broadcast channel that sends multiple interference free data streams to different users in the same cell. Unfortunately, block diagonalization neglects other-cell interference (OCI), which limits the performance of users at the edge of the cell. This paper presents an OCI-aware enhancement to block diagonalization that uses a whitening filter for interference suppression at the receiver and a novel precoder using the interference-plus-noise covariance matrix for each user at the transmitter. For complex Gaussian matrix channels, the asymptotic sum rate of the proposed system is analyzed under a large antenna assumption for isotropic inputs and compared to conventional block diagonalization. The capacity loss due to OCI is quantified in terms of results from single-user MIMO capacity. Several numerical examples compare achievable sum rates, the proposed asymptotic rates, and the capacity loss, in low and high interference regimes.

Recent achievements in direct ethylene glycol fuel cells (DEGFC)

Abstract: In the present review recent achievements in the development of new type of liquid fed fuel cell, specifically ethylene glycol (EG) operated in acid and alkaline media were summarized. The mechanism of EG electrooxidation in acid media on the platinum surface as well as on different platinum alloys is described. The development in the preparation of new effective electrocatalysts both for ethylene glycol oxidation and oxygen reduction in the presence of EG is discussed. Methods for improving the performance of direct ethylene glycol fuel cells (DEGFC), e.g., MEAs fabrication, operation conditions, etc. are shown.

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

Abstract: The impact of gate metals on the threshold voltage (VTH) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated by fabricating p-GaN gate HEMTs with different work function gate metals-Ni and W. p-GaN gate HEMTs incorporate a p-GaN layer under the gate electrode as the gate stack on top of the AlGaN/GaN layer. In comparison to the Ni-gate p-GaN HEMTs, the W-gate p-GaN HEMTs showed a higher VTH of 3.0 V and a lower gate current of 0.02 mA/mm at a gate bias of 10 V. Based on TCAD device simulations, we revealed that these high VTH and low gate current are attributed to the low gate metal work function and the high Schottky barrier between the p-GaN and the W gate metal.

Fine-grained dynamic voltage and frequency scaling for precise energy and performance tradeoff based on the ratio of off-chip access to on-chip computation times

Abstract: This work presents an intraprocess dynamic voltage and frequency scaling (DVFS) technique targeted toward nonreal-time applications running on an embedded system platform. The key idea is to make use of runtime information about the external memory access statistics in order to perform CPU voltage and frequency scaling with the goal of minimizing the energy consumption while translucently controlling the performance penalty. The proposed DVFS technique relies on dynamically constructed regression models that allow the CPU to calculate the expected workload and slack time for the next time slot and, thus, adjust its voltage and frequency in order to save energy, while meeting soft timing constraints. This is, in turn, achieved by estimating and exploiting the ratio of the total off-chip access time to the total on-chip computation time. The proposed technique has been implemented on an XScale-based embedded system platform and actual energy savings have been calculated by current measurements in hardware. For memory-bound programs, a CPU energy saving of more than 70% with a performance degradation of 12% was achieved. For CPU-bound programs, 15% /spl sim/ 60% CPU energy saving was achieved at the cost of 5%-20% performance penalty.

Apparatus and method for using ambient RF power in a portable terminal

Abstract: An apparatus and method for using ambient RF power in a portable terminal are provided. In the charging apparatus, an antenna array receives RF signals left derelict in the air, a rectifier rectifies the RF signals to DC voltages, and a power storage stores the DC voltages as power.