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Institution

Panasonic

CompanyKadoma, Ôsaka, Japan
About: Panasonic is a company organization based out in Kadoma, Ôsaka, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 49129 authors who have published 71118 publications receiving 942756 citations. The organization is also known as: Panasonikku Kabushiki-gaisha & Panasonic.


Papers
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Patent
17 Dec 2004
TL;DR: In this paper, the authors proposed a hybrid automatic repeat request (HARQ) method for transmitting data packets from a transmitting entity to a receiving entity via a data channel, where a feedback message is received from the receiving entity at the transmitting entity and, in case the feedback message indicates that the data packet has not been received successfully, a retransmission data packet is transmitted to the receiving entities after a predetermined time span upon having received said feedback message.
Abstract: The present invention relates to a hybrid automatic repeat request (HARQ) method for transmitting data packets from a transmitting entity to a receiving entity via a data channel. Further, the present invention is related to mobile stations, base stations, radio network controllers and communication systems performing in the HARQ method. To overcome problems resulting from asynchronous retransmissions, the present invention provides a HARQ method sending retransmissions synchronous. According to the method, a feedback message is received from the receiving entity at the transmitting entity and, in case the feedback message indicates that the data packet has not been received successfully, a retransmission data packet is transmitted to the receiving entity after a predetermined time span upon having received said feedback message. The receiving entity soft combines the retransmission data packet with the previously received data packet.

106 citations

Patent
05 Feb 2002
TL;DR: In this article, a mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on the main surface of a base substrate.
Abstract: A mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on a main surface of a base substrate. Then, on the base substrate, a semiconductor layer of nitride is selectively grown through the mask film. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the base substrate to separate the semiconductor layer from the base substrate, so that a nitride semiconductor substrate is formed from the semiconductor layer.

106 citations

Patent
Hideo Nagai1
01 Sep 2005
TL;DR: In this paper, a semiconductor light-emitting device (SLEM) consisting of a substrate supporting the semiconductor multilayer film, and a phosphor layer formed on the substrate so as to cover the SLEM, is described.
Abstract: A semiconductor light-emitting device (1) includes: a semiconductor multilayer film (12), a substrate (13) supporting the semiconductor multilayer film; and a phosphor layer (11) formed on the substrate so as to cover the semiconductor multilayer film. The phosphor layer has an outer edge of a cross section taken in a direction parallel to the principal surface (13a) of the substrate having a substantially circular shape or a substantially regular polygonal shape having five or more sides. An outer edge of the principal surface of the substrate is formed in a substantially circular shape or a substantially regular polygonal shape having five or more sides. With this configuration, light obtained therefrom has less non-uniformity in color and a high luminous flux can be realized.

106 citations

Patent
16 Mar 1984
TL;DR: In this article, the acoustic impedance-matching layer is made of a porous polymer film or a composite material comprising thermally expanded resin microspheres dispersed in a cured product of thermosetting resin and has an acoustic impedance not larger than 0.6×10 6 Ns/m 3.
Abstract: Ultrasonic transducers comprising an ultrasonic transducer element, a pair of electrodes provided on opposite sides of the element, and an acoustic impedance-matching layer formed on an ultrasonic wave-radiating surface of the element through one electrode. The acoustic impedance-matching layer is made of a porous polymer film or a composite material comprising thermally expanded resin microspheres dispersed in a cured product of thermosetting resin and has an acoustic impedance not larger than 0.6×10 6 Ns/m 3 . Two-layer constructions may also be used as the acoustic impedance-matching layer.

106 citations

Patent
Tiffany Yun1, David Kryze1, Lucas Divine1, Alex Wood1, D. Santos1 
25 Mar 2010
TL;DR: In this article, the shape of a reconfigurable surface area can be modified to provide input and output functionality based on system, application, mode, and/or user needs.
Abstract: Systems and methods for altering the shape of a reconfigurable surface area are presented. The present systems and methods facilitate efficient and effective interaction with a device or system. In one embodiment, a surface reconfiguration system includes a flexible surface; an elevation unit that creates alterations in the contours of the surface; and an elevation control component that controls adjustments to the elevation unit. Thus, the surface of the device is reconfigurable based on system, application, mode, and/or user needs. Accordingly, the surface can be used to provide input and output functionality. The surface can include touch detection functionality for added input functionality.

106 citations


Authors

Showing all 49132 results

NameH-indexPapersCitations
Yang Yang1712644153049
Hideo Hosono1281549100279
Shuicheng Yan12381066192
Akira Yamamoto117199974961
Adam Heller11138141063
Tadashi Kokubo10455749042
Masatoshi Kudo100132453482
Héctor D. Abruña9858538995
Duong Nguyen9867447332
Henning Sirringhaus9646750846
Chao Yang Wang9530726857
George G. Malliaras9438228533
Masaki Takata9059428478
Darrell G. Schlom8864141470
Thomas A. Moore8743730666
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
20227
2021325
2020933
20191,527
20181,588