Panasonic

About: Panasonic is a company organization based out in Kadoma, Ôsaka, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 49129 authors who have published 71118 publications receiving 942756 citations. The organization is also known as: Panasonikku Kabushiki-gaisha & Panasonic.

Semiconductor memory device

Abstract: A semiconductor memory device includes a field-effect transistor with a gate electrode that has been formed over a semiconductor substrate with a ferroelectric layer interposed between the electrode and the substrate. The device includes a first insulating layer, which is insulated against a leakage current more fully than the ferroelectric layer, between the ferroelectric layer and the gate electrode.

Common mode noise filter

Abstract: A common mode noise filter includes a first insulating layer made of magnetic material, a first conductor on the first insulating layer, a second insulating layer located on the first conductor and made of nonmagnetic material, a second conductor having a spiral shape on the second insulating layer and connected with the first conductor, a third insulating layer located on the second conductor and made of nonmagnetic material, a third conductor having a spiral shape provided on the third insulating layer, a fourth insulating layer located on the third conductor and made of nonmagnetic material, a fourth conductor connected with the third conductor, a fifth insulating layer provided on the fourth conductor and made of magnetic material. The first conductor and the second conductor provide a first coil. The third conductor and the fourth conductor provide a second coil. The third insulating layer is thicker than the second insulating layer and the fourth insulating layer. This filter can increase impedance of the first and second coils against common mode components.

Lighting unit, image display device having the same, and image display method

Abstract: PROBLEM TO BE SOLVED: To expand the display luminance range of an image display device to an ideal range and to secure image quality. SOLUTION: The image display device is equipped with an LCD panel 10 which forms an image according to an image signal and an LED panel (back light) 20 which irradiates an optical modulating element with illumination light for forming the image. The image display device is also equipped with a lighting means 25 of dividing the illumination light into a plurality of regions and radiating them, a luminance distribution calculating means 50 of calculating a luminance distribution of image signals corresponding to the plurality of regions and determining illumination light luminance levels of the regions, a back light control means 80 of controlling the illumination light of the respective regions of the lighting means according to the determination by the luminance distribution calculating means, and an image correcting means 60 of correcting an image signal inputted to the light modulating device based upon the determination by the luminance distribution calculating means. COPYRIGHT: (C)2005,JPO&NCIPI

An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned process

Abstract: An ultra-low on-resistance power MOSFET fabricated by use of a fully self-aligned process is demonstrated. The feature of the new process is that most of the processing steps, such as channel formation, gate definition, and contact-hole opening, are carried out through a single masking step. This permits a remarkable increase in packing density, and thereby conducts the reduction of the channel resistance. A gate width per unit area of 50 cm /mm2has been implemented by using the new process with a 4-µm-pitch layout rule. This value is at least four times larger than that of the conventional VDMOSFET. The experimentally fabricated device, which possesses a total gate width of 480 cm in a 3.8 mm × 4.0 mm chip, exhibited an on-resistance of 9 mΩ and a breakdown voltage of 30 V. The resulting on-resistance area product of 137 mΩ .mm2is the smallest value ever reported.

Branched methoxydiphenylamine-substituted fluorene derivatives as hole transporting materials for high-performance perovskite solar cells

Abstract: Small-molecule hole transporting materials based on methoxydiphenylamine-substituted fluorene fragments were synthesized and incorporated into a perovskite solar cell, which displayed a power conversion efficiency of up to 19.96%, one of the highest conversion efficiencies reported. The investigated hole transporting materials were synthesized in two steps from commercially available and relatively inexpensive starting reagents, resulting in up to fivefold cost reduction of the final product compared with spiro-OMeTAD. Electro-optical and thermoanalytical measurements such as UV/Vis, thin-film conductivity, hole mobility, DSC, TGA, ionization potential and current voltage scans of the full perovskite solar cells have been carried out to characterize the new materials.