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Institution

Panasonic

CompanyKadoma, Ôsaka, Japan
About: Panasonic is a company organization based out in Kadoma, Ôsaka, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 49129 authors who have published 71118 publications receiving 942756 citations. The organization is also known as: Panasonikku Kabushiki-gaisha & Panasonic.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors conducted a systematic investigation of solid solution thin films of Zn 1− x Mg x O, a group of ternary compounds of the Zn-Mg-O system.

330 citations

Patent
12 Feb 2004
TL;DR: In this paper, a memory configuration controller for controlling the memory allocation to the first, the second, and the external processing unit in accordance with an application is presented, which can be used to control the memory assignment to the main processor, the video interface and the graphics processor.
Abstract: A semiconductor integrated circuit device includes a plurality of internal memories, a main processor, which constitutes a first processing unit having a codec function, and a video interface and graphics processor, which constitute a second processing unit for video display processing. The semiconductor integrated circuit device operates while being connected to a CPU, which is an external processing unit, and an external memory. The semiconductor integrated circuit device is provided with a memory configuration controller for controlling the memory allocation to the first, the second, and the external processing unit in accordance with an application.

329 citations

Journal ArticleDOI
TL;DR: In this article, a gate injection transistor (GIT) is proposed to increase the drain current with low on-state resistance by conductivity modulation, which greatly helps in increasing the efficiency of power switching systems.
Abstract: This paper reviews the recent activities for normally-off GaN-based gate injection transistors (GITs) on Si substrates and their application to inverters. Epitaxial growth of the AlGaN/GaN heterostructures with good crystallinity over 200-mm Si substrates with eliminated bowing enables low-cost fabrication of GaN devices with high breakdown voltages. A novel normally-off GaN transistor called as GIT is proposed in which hole injection from the p-type AlGaN gate increases the drain current with low on-state resistance by conductivity modulation. The low on-state resistance in GaN-based devices greatly helps to increase the efficiency of power switching systems. A GaN-based three-phase inverter successfully drives a motor with high efficiency of 99.3% at a high output power of 1500 W. The presented GaN-based devices are expected to greatly help saving energy in the future as an indispensable power switching system.

329 citations

Patent
27 Dec 2011
TL;DR: In this article, a battery module includes a plurality of battery assemblies stacked together, and each of the battery assemblies includes an insulating case which accommodates the same polarities of the cells.
Abstract: A battery module includes a plurality of battery assemblies stacked together. Each of the battery assemblies includes an insulating case which accommodates a plurality of cells. A first connection plate connects the same polarities of the cells, and a second connection plate connects polarities opposite the same polarities of the cells. The first connection plate includes a first connection terminal which protrudes in a direction opposite a direction toward the second connection plate. The second connection plate includes a second connection terminal which protrudes in a direction toward the first connection terminal. The first connection terminal protrudes outwardly of the case. The second connection terminal protrudes inwardly of the case. In the battery assemblies adjacent to each other in a stacking direction, the first connection terminal of one battery assembly and the second connection terminal of the other battery assembly are fitted to each other. The first connection terminal of one battery assembly protrudes inwardly of the case of the other battery assembly.

322 citations

Journal ArticleDOI
Atsushi Nishino1
TL;DR: The worldwide market for capacitors was approximately US$ 12.3 billion in 1993, of which production within Japan accounted for approximately 50% and the combined domestic and overseas production of Japanese manufacturers accounted for about 70% as discussed by the authors.

322 citations


Authors

Showing all 49132 results

NameH-indexPapersCitations
Yang Yang1712644153049
Hideo Hosono1281549100279
Shuicheng Yan12381066192
Akira Yamamoto117199974961
Adam Heller11138141063
Tadashi Kokubo10455749042
Masatoshi Kudo100132453482
Héctor D. Abruña9858538995
Duong Nguyen9867447332
Henning Sirringhaus9646750846
Chao Yang Wang9530726857
George G. Malliaras9438228533
Masaki Takata9059428478
Darrell G. Schlom8864141470
Thomas A. Moore8743730666
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
20227
2021325
2020933
20191,527
20181,588