Panasonic

About: Panasonic is a company organization based out in Kadoma, Ôsaka, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 49129 authors who have published 71118 publications receiving 942756 citations. The organization is also known as: Panasonikku Kabushiki-gaisha & Panasonic.

Rechargeable lithium cell and process for making an anode for use in the cell

Abstract: This invention relates to a rechargeable lithium cell comprises a cathode having a discharge potential not less than 2 V relative to a Li/Li⁺ anode, an anode capable of doping and un-doping lithium and made of a material comprising a lithium titanate having a spinnel structure and represented by the general formula, LixTiyO₄ wherein 0.8≦x≦1.4 and 1.6≦y≦2.2, a separator separating the cathode and the anode from each other, and an electrolytic solution impregnated at least in the separator and dissolving a lithium salt in a non-aqueous solvent. When subjected to X-ray diffraction analysis, the material has peaks at least at 4.84 ± 0.02 angstroms, 2.53 ± 0.02 angstroms, 2.09 ± 0.02 angstroms and 1.48 ± 0.02 angstroms and a ratio of a peak intensity at 4.84 ± 0.02 angstroms and a peak intensity at 1.48 ± 0.02 angstroms of 100:30 ±10. The material may consist of the lithium titanate or mixed crystals of the lithium titanate and rutile-type titanium dioxide. A process for making the anode is also described.

A 2.4 GHz ULP OOK Single-Chip Transceiver for Healthcare Applications

Abstract: This paper describes an ultra-low power (ULP) single chip transceiver for wireless body area network (WBAN) applications. It supports on-off keying (OOK) modulation, and it operates in the 2.36-2.4 GHz medical BAN and 2.4-2.485 GHz ISM bands. It is implemented in 90 nm CMOS technology. The direct modulated transmitter transmits OOK signal with 0 dBm peak power, and it consumes 2.59 mW with 50% OOK. The transmitter front-end supports up to 10 Mbps. The transmitter digital baseband enables digital pulse-shaping to improve spectrum efficiency. The super-regenerative receiver front-end supports up to 5 Mbps with -75 dBm sensitivity. Including the digital part, the receiver consumes 715 μW at 1 Mbps data rate, oversampled at 3 MHz. At the system level the transceiver achieves PER=10 -2 at 25 meters line of site with 62.5 kbps data rate and 288 bits packet size. The transceiver is integrated in an electrocardiogram (ECG) necklace to monitor the heart's electrical property.

Fixture, circuit board with fixture, and electronic-component mounted body and method of manufacturing the same

Abstract: A fixture with movable pawls and positioning walls is attached to a circuit board. An electronic component is inserted into the fixture from its upper side. Since the movable pawls move outward due to their slopes, the electronic component is allowed to fit between the positioning walls. After the fitting of the electronic component, the movable pawls hold the sides of the upper face of the electronic component and the positioning walls are in contact with the peripheral walls of the electronic component. Bumps provided on electrode pads of the electronic component are connected to electrodes on the circuit board. Thus, the electronic component can be mounted using the flip chip technique. In addition, the electronic component can be removed easily by moving the movable pawls even after being mounted.

Semiconductor device and layout design method therefor

Abstract: A layout design method for a semiconductor device includes a step of arranging transistors, a dummy gate forming step of forming dummy gates, which has a shape identical with a shape including gate electrodes or the gate electrodes and projected parts from active regions of the gate electrodes, in positions in parallel with and a fixed distance apart from the gate electrodes arranged at both ends in a gate length direction on active regions of the transistors and, when the transistors have plural gate electrodes with different gate widths, extending the projected parts to the outside of the active regions by a necessary length, a gate connecting step of, when gate patterns and contact regions are connected to the gate electrodes of the transistors, connecting the gate electrodes and the dummy gates according to a positional relation between the gate electrodes and the dummy gates, and a wiring step of wiring a metal layer. It is possible to design a semiconductor device having a smaller area than that in the past and with a less design man-hour.

Multi-layered information recording medium, reproduction apparatus, recording apparatus, reproduction method, and recording method

Abstract: A multi-layered information recording medium comprising a plurality of recording layers, a user data area for recording user data, provided in at least two of the plurality of recording layers, and a defect list storing area for storing a defect list. When at least one defective area is detected in the user data area, the defect list is used to manage the at least one defective area.