S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Co-implantation of Be+O and Mg+O into GaN
TL;DR: Beryllium and magnesium were co-implanted with oxygen into GaN at precise donor-to-acceptor ratios of 0.5-2 and anneal temperatures of 1050-1100°C as mentioned in this paper.
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Etch rates and surface chemistry of GaAs and AlGaAs reactively ion etched in C2H6/H2
TL;DR: In this paper, the etch rates of GaAs and AlxGa1−xAs were investigated as a function of time (1-12 min), gas flow rate (5-25 sccm), total pressure (4-30 mTorr), plasma power density (0.56-1.32 W cm−2), and percentage of C2H6 in the discharge (10%-50%).
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Cl2-based dry etching of GaN films under inductively coupled plasma conditions
Yeon-Ho Im,J. S. Park,Yoon-Bong Hahn,K. S. Nahm,Y. S. Lee,B. C. Cho,K. Y. Lim,H. J. Lee,Stephen J. Pearton +8 more
TL;DR: In this article, dry etching of undoped, n and p-type GaN films was carried out in Cl2-based inductively coupled plasmas (ICPs) using different rf excitation frequencies of 100 kHz and 13.56 MHz, in which the rf chuck power source operates.
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High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors
Xian-An Cao,J. M. Van Hove,J. J. Klaassen,C. J. Polley,A. M. Wowchack,Peter Chow,D.J King,Fan Ren,G. T. Dang,A. P. Zhang,C. R. Abernathy,Stephen J. Pearton +11 more
TL;DR: In this article, GaN Bipolar Junction Transistors and GaN/AlGaN Heterojunction Bipolar Transistors were characterized at temperatures up to 250-300°C and power densities > 10 kW cm −2.
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Comparison of ohmic metallization schemes for InGaAlN
Fan Ren,Catherine Vartuli,Stephen J. Pearton,C. R. Abernathy,S. M. Donovan,J. D. MacKenzie,Randy J. Shul,John C. Zolper,M. L. Lovejoy,Albert G. Baca,M. Hagerott-Crawford,Kenneth A. Jones +11 more
TL;DR: In this paper, the specific contact resistances for all three metallization schemes were examined on n+In0.65Ga0.35N, InN, and In0.75Al0.4N.