S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs: C
Y. D. Park,J. D. Lim,Kil-Soo Suh,Seung-Bo Shim,Ju-Wan Lee,C. R. Abernathy,Stephen J. Pearton,Y. S. Kim,Z. G. Khim,Robert G. Wilson +9 more
TL;DR: In this article, high-p-type GaAs were implanted with Mn at differing doses to produce Mn concentrations in the 1 -5 at. % range, consistent with observed magnetic properties and with epi-LT-(Ga,Mn)As.
Journal ArticleDOI
InN-based Ohmic contacts to InAlN
S. M. Donovan,J. D. MacKenzie,C. R. Abernathy,Stephen J. Pearton,Fan Ren,Kevin S. Jones,Melanie W. Cole +6 more
TL;DR: The ability to form low resistance Ohmic contacts to InAlN using refractory metallization on In-containing contact layers has been investigated in this paper, where the crystal quality as measured by surface roughness and x-ray diffraction was found to be a determining factor in the contact resistance which could be obtained using W6 contacts.
Journal ArticleDOI
2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification
TL;DR: In this article, NPN double HBTs (DHBTs) are constructed from vertically stacked 2DMs (n-MoS2/p-WSe2/n- MoS2) using dry transfer technique.
Journal ArticleDOI
Implanted p–n junctions in GaN
Xian-An Cao,Jeffrey R. LaRoche,Fan Ren,Stephen J. Pearton,James Robert Lothian,Rajiv K. Singh,Robert G. Wilson,H. J. Guo,S. J. Pennycook +8 more
TL;DR: In this article, Si + ion implantation into GaN(Mg), followed by rapid thermal annealing at 1100°C was used to create n+/p junctions.
Journal ArticleDOI
Er doping of III-nitrides during growth by metalorganic molecular beam epitaxy
J. D. MacKenzie,C. R. Abernathy,Stephen J. Pearton,Uwe Hommerich,X. Wu,Robert N. Schwartz,Robert G. Wilson,J. M. Zavada +7 more
TL;DR: In this article, solid source Er doping of AlN and GaN during growth by plasma-assisted metalorganic molecular beam epitaxy (MOMBE) with an Er effusion source has resulted in room-temperature 1.54 μm photoluminescence (PL).