S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Plasma etching of wide bandgap and ultrawide bandgap semiconductors
TL;DR: In this article, the authors review the optimum choices for plasma chemistries for each of the semiconductors and acknowledge the pioneering work of John Coburn, who first delineated the ion-assisted etch mechanism.
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Minipressure sensor using AlGaN/GaN high electron mobility transistors
S. C. Hung,B. H. Chou,Chih-Yang Chang,Chien-Fong Lo,K. H. Chen,Yu-Lin Wang,Stephen J. Pearton,Amir M. Dabiran,Peter Chow,Gou-Chung Chi,Fan Ren +10 more
TL;DR: In this article, the gate charge of a GaN/GaN high electron mobility transistors (HEMTs) with a polarized polyvinylidene difluoride (PVDF) film coated on the gate area exhibited significant changes in channel conductance upon exposure to different ambient pressures.
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Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN
Lars F. Voss,L. Stafford,Rohit Khanna,Brent P. Gila,C. R. Abernathy,Stephen J. Pearton,Fan Ren,Ivan I. Kravchenko +7 more
TL;DR: Ohmic contacts to p-GaN using a Ni∕Au∕X∕Ti∕AU metallization scheme, where X is TaN, TiN, or ZrN, are reported in this article.
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1.55 μm Er-doped GaN LED
Hongen Shen,Jagadeesh Pamulapati,M Taysing,Mark C. Wood,R. T. Lareau,Matthew H. Ervin,J. D. MacKenzie,Cammy R. Abernathy,Stephen J. Pearton,Fan Ren,J. M. Zavada +10 more
TL;DR: In this paper, the authors reported 1.55μm emission from an Er-doped GaN LED and discussed the effect of measurement temperature on the emission spectrum as well as sample annealing on the spectrum.
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Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage
Ya-Hsi Hwang,S.S. Li,Yueh-Ling Hsieh,Fan Ren,Stephen J. Pearton,Erin Patrick,Mark E. Law,David J. Smith +7 more
TL;DR: The effect of proton irradiation on the off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was studied by irradiating protons from the backside of the samples through via holes fabricated directly under the active area of the HEMTs.