S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
More filters
Journal ArticleDOI
Charge carrier and spin doping in ZnO thin films
David P. Norton,M. Ivill,Yongjun Li,Y. W. Kwon,J. M. Erie,H. S. Kim,Kelly P. Ip,Stephen J. Pearton,Young-Woo Heo,S. Kim,B. S. Kang,Fan Ren,Arthur F. Hebard,J. Kelly +13 more
TL;DR: A review of recent efforts on doping ZnO films for charge and spin functionality is presented in this article, with a focus on chemical doping for spin and charge device formation. Discussion includes the behavior of phosphorus as an acceptor and magnetism in transition metal-doped (Zn,Mg)O grown by pulsed laser deposition.
Journal ArticleDOI
Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy
M. E. Overberg,Brent P. Gila,Cammy R. Abernathy,Stephen J. Pearton,Nikoleta Theodoropoulou,K. T. McCarthy,S. B. Arnason,Arthur F. Hebard +7 more
TL;DR: Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnP:C is reported in this article, where the results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K.
Journal ArticleDOI
Studies of minority carrier diffusion length increase in p-type ZnO:Sb
O. Lopatiuk-Tirpak,Leonid Chernyak,Faxian Xiu,J. L. Liu,S. Jang,Fan Ren,Stephen J. Pearton,Konstantin Gartsman,Yishay Feldman,Andrei Osinsky,Peter Chow +10 more
TL;DR: A thermally induced increase of electron diffusion length was determined to have an activation energy of 184±10meV in p-type Sb-doped ZnO as a function of temperature using the electron beam induced current technique as discussed by the authors.
Journal ArticleDOI
A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3
Soohwan Jang,Sunwoo Jung,Kimberly Beers,Jiancheng Yang,Fan Ren,Akito Kuramata,Stephen J. Pearton,Kwang Hyeon Baik +7 more
TL;DR: In this article, the effect of β-Ga2O3 crystal orientation on wet etching and Ohmic contact formation was investigated and the photochemical etching rate in KOH solutions of ( 2 ¯ 01 ) oriented, n-type bulk single crystals grown by the edge-defined film-fed growth method is ∼3-4 times higher than for the (010) planes.
Journal ArticleDOI
Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P
TL;DR: In this paper, the magnetic and transport properties of Mn-doped ZnO thin-film with P doping were examined and it was shown that the films are ferromagnetic with an inverse correlation between magnetization and electron density as controlled by P doping.