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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Pt∕ZnO nanowire Schottky diodes
Young-Woo Heo,Li-Chia Tien,David P. Norton,Stephen J. Pearton,B. S. Kang,Fan Ren,Jeffrey R. LaRoche +6 more
TL;DR: Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO2-coated Si substrates as mentioned in this paper.
Journal ArticleDOI
ZnO spintronics and nanowire devices
Stephen J. Pearton,David P. Norton,Young-Woo Heo,Li-Chia Tien,M. Ivill,Yongjun Li,B. S. Kang,Fan Ren,J. Kelly,Arthur F. Hebard +9 more
TL;DR: In this paper, an inverse correlation between magnetization and electron density as controlled by Sn-doping was found in films doped with Mn during pulsed laser deposition (PLD), suggesting that carrier concentration alone alone cannot explain the magnetic properties of ZnO:Mn and factors such as crystalline quality and residual defects play a role.
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Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
Sang-Yun Sung,Jun Hyuk Choi,Un Bin Han,Ki Chang Lee,Joon-Hyung Lee,Jeong-Joo Kim,Wantae Lim,Stephen J. Pearton,David P. Norton,Young-Woo Heo +9 more
TL;DR: In this article, the authors investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen, oxygen, air, or vacuum at room temperature during measurements.
Reference BookDOI
GaN and related materials II
TL;DR: Theoretical properties of 3-V Nitrides have been studied in this paper, where they have been shown to have properties similar to those of GaN and AlGaN.
Journal ArticleDOI
Flexible graphene-based chemical sensors on paper substrates
TL;DR: This work demonstrates a facile method without complex photo-lithography and high vacuum processes for fabricating graphene-based flexible NO(2) sensors on paper substrates with high sensing response.