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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Ion implantation and rapid thermal processing of III–V nitrides
John C. Zolper,M. Hagerott Crawford,Stephen J. Pearton,C. R. Abernathy,Catherine Vartuli,C. Yuan,Richard A. Stall +6 more
TL;DR: In this article, the authors review the recent developments in implant doping and isolation along with rapid thermal annealing of GaN and the In-containing ternary alloys InGaN and InAlN.
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Schottky diode measurements of dry etch damage in n- and p-type GaN
TL;DR: In this paper, both n-and p-type GaN was exposed to inductively coupled plasma of N2, H2, Ar, or Cl2/Ar, as a function of source power (0-1000 W) and rf chuck power (20-250 W).
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Annealing of dry etch damage in metallized and bare (-201) Ga2O3
Jiancheng Yang,Fan Ren,Rohit Khanna,Kristen Bevlin,Dwarakanath Geerpuram,Li-Chun Tung,Jingyu Lin,Hongxing Jiang,Jonathan R. I. Lee,Elena Flitsiyan,Leonid Chernyak,Stephen J. Pearton,Akito Kuramata +12 more
TL;DR: In this article, the surface of single-crystal oriented β-Ga2O3 was etched in BCl3/Ar inductively coupled plasmas under conditions (an excitation frequency of 13.56 MHz, a source power of 400 W, and a dc self-bias of −450 V) that produce removal rates of ∼700
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Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs
K. P. Lee,A. P. Zhang,G. T. Dang,Fan Ren,Jung Han,S. N. G. Chu,William Scott Hobson,John Lopata,C. R. Abernathy,Stephen J. Pearton,J. W. Lee +10 more
TL;DR: In this article, a self-aligned fabrication process for small emitter contact area (2×4 μ m2) GaN/AlGaN heterojunction bipolar transistors and GaN bipolar junction transistors is described.
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Implantation and redistribution of dopants and isolation species in GaN and related compounds
TL;DR: In this article, 12 different elements used for doping or isolation were implanted into GaN (and selected species into AlN and InN), and the resulting range parameters were measured by secondary ion mass spectrometry.