S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Outdiffusion of deuterium from GaN, AlN, and InN
TL;DR: In this article, the authors quantified the outdiffusion of hydrogen using 2H plasma-treated (250 or 400 °C, 30 min) or 2H+implanted (implanted GaN, AlN, and InN) from 300 to 900°C and used secondary ion mass spectrometry to measure the resultant distribution.
Journal ArticleDOI
Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors
Gabby Sarusi,Barry F. Levine,Stephen J. Pearton,K. M. S. V. Bandara,Ronald E. Leibenguth,J. Y. Andersson +5 more
TL;DR: In this article, a detailed study of two-dimensional grating coupling for quantum well infrared photodetectors in the very long wavelength spectral region λ∼16-17 μm was performed.
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Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts
Wantae Lim,J.S. Wright,Brent P. Gila,Stephen J. Pearton,Fan Ren,Wei-Ta Lai,Li-Chyong Chen,Ming-Shien Hu,Kuei-Hsien Chen +8 more
TL;DR: In this paper, the hydrogen sensing characteristics of multiple InN nanobelts grown by metalorganic chemical vapor deposition were investigated, and the Pt-coated InN sensors could selectively detect hydrogen at the tens of ppm level at 25 °C, while uncoated inN showed no detectable change in current when exposed to hydrogen under the same conditions.
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High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor
C. Yuan,T. Salagaj,Alexander I. Gurary,P. Zawadzki,C. S. Chern,W. Kroll,R. A. Stall,Y. Li,M. Schurman,C.-Y. Hwang,W. E. Mayo,Yicheng Lu,Stephen J. Pearton,S. Krishnankutty,R. M. Kolbas +14 more
TL;DR: Very high quality p-type GaN thin films have been epitaxially grown on c-sapphire substrates by the MOCVD technique in a multi-wafer rotating-disk reactor at 1040°C with a GaN buffer layer of ∼200 A grown at 530°C as discussed by the authors.
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Improved oxide passivation of AlGaN /GaN high electron mobility transistors
Brent P. Gila,M. Hlad,A. H. Onstine,R. M. Frazier,G. T. Thaler,Andrew M. Herrero,Eric Lambers,C. R. Abernathy,Stephen J. Pearton,Timothy J. Anderson,Soohwan Jang,Fan Ren,Neil Moser,Robert C. Fitch,M. Freund +14 more
TL;DR: In this article, the authors showed that passivated HEMTs with Mg0.5Ca 0.5O and Mg 0.75O showed higher passivation effectiveness 90% of dc current then the MgO passivated devices 83% dc current, due to the closer lattice matching of these calcium containing oxides.