Stephen J. Pearton

TL;DR: The capacitance signal resulting from single electrons tunneling into discrete quantum levels is observed and the nature of the bound states is deduced from the magnetic field evolution of the spectrum.

TL;DR: The current status of ion beam processing of GaN is reviewed in this article, where the authors discuss the following aspects of ion implantation into GaN: (i) damage build-up and amorphization, (ii) preferential surface disordering and loss of nitrogen during ion bombardment, (iii) ion-beam-induced porosity of amorphous GaN due to material dissociation, anomalous surface erosion during ion radiation at elevated temperatures, (iv) the effect of implantation disorder on mechanical properties, (vi) current progress on annealing of implant

TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.

TL;DR: This work presents Hydrogen Sensing Using Pd-Functionalized Multi-Layer Graphene Nanoribbon Networks U N IC, a novel approach to chemical gas sensors based on nanoscale materials that has attracted research attention due to their naturally small size and large surface-to-volume ratio.

TL;DR: In this paper, a GaMnN thin film was synthesized using gas-source molecular-beam epitaxy and magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples.